HgCdTe-MISFET fabrication with multi-step surface passivation and quantum effects

C. H. Lee, S. W. Paik, J. W. Park, Jaesun Lee, Y. M. Moon, J. B. Choi, H. Jung, H. C. Lee, C. K. Kim, M. S. Hahn, B. K. Song, Y. B. Hou, T. W. Kang, K. H. Yoo, Y. T. Jeoung, H. K. Kim, J. M. Kim

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


We have used multi-step surface passivation process integrating electrochemical reduction and UV exposure with native sulfidization by H2S gas to obtain high quality ZnS/p-HgCdTe interface. It shows very low parasitic interface charge density of the order of 1010cm-2. The insulating ZnS layer also exhibits very high resistivity of ∼1012 Ωcm. The resulting fabricated HgCdTe-MISFETs show 2D quantum effects. Magnetoresistance measured at 1.5K displays oscillations which begin to appear above the gate voltage of 10V. They are identified as the Shubnikov-de Haas oscillations involving three electronic subbands. The magnetotransport data are quantitatively analyzed with the calculated Landau level-fan diagram and confirm the 2D subband quantization of the inversion layer at the ZnS/p-HgCdTe interface. This result demonstrates successful role of the multi-step surface passivation for realizing 2D ZnS/HgCdTe interface which will provide high quality 2DEG resevoir basis in future Hg-based narrow-gap nanostructure device applications.

Original languageEnglish
Pages (from-to)668-671
Number of pages4
JournalJournal of Electronic Materials
Issue number6
Publication statusPublished - 1998 Jun

Bibliographical note

Funding Information:
This work was supported by BSRI-97-2435 and Korea Agency for Defense Development.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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