HfO2 gate stack engineering by post-gate cleaning using NF3/NH3 plasma

Min Seon Lee; Hoon Jung Oh; Joo Hee Lee; In Geun Lee; Woo Gon Shinc; Sung Yong Kang; Dae Hong Ko

doi:10.1149/06439.0011ecst

HfO₂ gate stack engineering by post-gate cleaning using NF₃/NH₃ plasma

Min Seon Lee, Hoon Jung Oh, Joo Hee Lee, In Geun Lee, Woo Gon Shinc, Sung Yong Kang, Dae Hong Ko

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, we present preliminary findings on the fluorine incorporation into the HfO₂ gate stack using post-gate dry cleaning technique with the novel NF₃/NH₃ plasma as an engineering technique to improve the HfO₂ gate stack. The NF₃/NH₃ dry cleaning process was carried out using an indirect down-stream CCP system after annealing HfO₂ gate stack. The analysis of chemical composition of HfO₂ gate stacks by XPS has revealed that fluorine was incorporated into the HfO₂ films and Si-O bonding of interfacial layer was decreased depending on the process condition of the NF₃/NH₃ dry cleaning. TEM results consistently showed the interfacial SiO_x layer thickness of the HfO₂ gate stack was decreased with the NF₃/NH₃ dry cleaning. Also we have found that its electrical properties were improved with the reduced gate leakage currents and EOT.

Original language	English
Title of host publication	Plasma Processing 20
Editors	S. Mathad, D. W. Hess, O. M. Leonte, M. Engelhardt
Publisher	Electrochemical Society Inc.
Pages	11-16
Number of pages	6
Edition	39
ISBN (Electronic)	9781607685371, 9781607685388, 9781607685395, 9781607685418, 9781607685425, 9781607685432, 9781607685449, 9781607685456, 9781607685463, 9781607685470, 9781607685487, 9781607685494, 9781607685500, 9781607685517, 9781607685524, 9781607685531, 9781607685548
DOIs	https://doi.org/10.1149/06439.0011ecst
Publication status	Published - 2015 Jan 1
Event	Symposium on Plasma Processing 20 - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: 2014 Oct 5 → 2014 Oct 9

Publication series

Name	ECS Transactions
Number	39
Volume	64
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on Plasma Processing 20 - 2014 ECS and SMEQ Joint International Meeting
Country/Territory	Mexico
City	Cancun
Period	14/10/5 → 14/10/9

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1149/06439.0011ecst

Cite this

Lee, M. S., Oh, H. J., Lee, J. H., Lee, I. G., Shinc, W. G., Kang, S. Y., & Ko, D. H. (2015). HfO₂ gate stack engineering by post-gate cleaning using NF₃/NH₃ plasma. In S. Mathad, D. W. Hess, O. M. Leonte, & M. Engelhardt (Eds.), Plasma Processing 20 (39 ed., pp. 11-16). (ECS Transactions; Vol. 64, No. 39). Electrochemical Society Inc.. https://doi.org/10.1149/06439.0011ecst

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title = "HfO2 gate stack engineering by post-gate cleaning using NF3/NH3 plasma",

abstract = "In this paper, we present preliminary findings on the fluorine incorporation into the HfO2 gate stack using post-gate dry cleaning technique with the novel NF3/NH3 plasma as an engineering technique to improve the HfO2 gate stack. The NF3/NH3 dry cleaning process was carried out using an indirect down-stream CCP system after annealing HfO2 gate stack. The analysis of chemical composition of HfO2 gate stacks by XPS has revealed that fluorine was incorporated into the HfO2 films and Si-O bonding of interfacial layer was decreased depending on the process condition of the NF3/NH3 dry cleaning. TEM results consistently showed the interfacial SiOx layer thickness of the HfO2 gate stack was decreased with the NF3/NH3 dry cleaning. Also we have found that its electrical properties were improved with the reduced gate leakage currents and EOT.",

author = "Lee, {Min Seon} and Oh, {Hoon Jung} and Lee, {Joo Hee} and Lee, {In Geun} and Shinc, {Woo Gon} and Kang, {Sung Yong} and Ko, {Dae Hong}",

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Lee, MS, Oh, HJ, Lee, JH, Lee, IG, Shinc, WG, Kang, SY & Ko, DH 2015, HfO₂ gate stack engineering by post-gate cleaning using NF₃/NH₃ plasma. in S Mathad, DW Hess, OM Leonte & M Engelhardt (eds), Plasma Processing 20. 39 edn, ECS Transactions, no. 39, vol. 64, Electrochemical Society Inc., pp. 11-16, Symposium on Plasma Processing 20 - 2014 ECS and SMEQ Joint International Meeting, Cancun, Mexico, 14/10/5. https://doi.org/10.1149/06439.0011ecst

HfO₂ gate stack engineering by post-gate cleaning using NF₃/NH₃ plasma. / Lee, Min Seon; Oh, Hoon Jung; Lee, Joo Hee et al.
Plasma Processing 20. ed. / S. Mathad; D. W. Hess; O. M. Leonte; M. Engelhardt. 39. ed. Electrochemical Society Inc., 2015. p. 11-16 (ECS Transactions; Vol. 64, No. 39).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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