HfO2 etching mechanism in inductively-coupled Cl2/Ar plasma

Moonkeun Kim, Alexander Efremov, Hyun Woo Lee, Hyung Ho Park, Munpyo Hong, Nam Ki Min, Kwang Ho Kwon

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6 Citations (Scopus)


Etching characteristics and the mechanism of HfO2 thin films in Cl2/Ar inductively-coupled plasma were investigated. The etch rate of HfO2 was measured as a function of the Cl2/Ar mixing ratio in the range of 0 to 100% Ar at a fixed gas pressure (6 mTorr), input power (700 W), and bias power (300 W). We found that an increase in the Ar mixing ratio resulted in a monotonic decrease in the HfO2 etch rate in the range of 10.3 to 0.7 nm/min while the etch rate of the photoresist increased from 152.1 to 375.0 nm/min for 0 to 100% Ar. To examine the etching mechanism of HfO2 films, we combined plasma diagnostics using Langmuir probes and quadrupole mass spectrometry with global (zero-dimensional) plasma modeling. We found that the HfO2 etching process was not controlled by ion-surface interaction kinetics and formally corresponds to the reaction rate-limited etch regime.

Original languageEnglish
Pages (from-to)6708-6711
Number of pages4
JournalThin Solid Films
Issue number20
Publication statusPublished - 2011 Aug 1

Bibliographical note

Funding Information:
This work was supported by the IT R&D program of MKE/KEIT [ KI002182 , TFT backplane technology for next generation display] and the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST; No. 2009-0085863 ).

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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