Hexagonal boron nitride assisted growth of stoichiometric Al2O3 dielectric on graphene for triboelectric nanogenerators

Sang A. Han, Kang Hyuck Lee, Tae Ho Kim, Wanchul Seung, Seok Kyeong Lee, Sungho Choi, Brijesh Kumar, Ravi Bhatia, Hyeon Jin Shin, Woo Jin Lee, Seong Min Kim, Hyoung Sub Kimq, Jae Yong Choi, Sang Woo Kim

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)


Here we demonstrate the deposition of a high-k dielectric material on graphene using hexagonal boron nitride (h-BN) nanosheets as a buffer layer. The presence of an h-BN layer on top of the graphene facilitated the growth of high-quality Al2O3 by atomic layer deposition (ALD). Simulation results also support the experimental observations and provide an explanation for the suitability of h-BN as a buffer layer in terms of mixed ionic-covalent B-N bonding. Additionally, h-BN works as a protective shield to prevent graphene oxidation during ALD of Al2O3 for the fabrication of graphene-based devices. Finally, triboelectric nanogenerators (TNGs) based on both Al2O3/h-BN/graphene and Al2O3/graphene structures are demonstrated for further confirming the importance of h-BN for synthesizing high-quality Al2O3 on graphene. It was found that the Al2O3/h-BN/graphene-based TNG reveals meaningful electric power generation under a mechanical friction, while no significant electric power output from the Al2O3/graphene-based TNG is obtained, indicating high charge storage capacity of the dielectric Al2O3 layer on h-BN.

Original languageEnglish
Pages (from-to)556-566
Number of pages11
JournalNano Energy
Publication statusPublished - 2015 Mar 1

Bibliographical note

Publisher Copyright:
© 2015 Elsevier Ltd.

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)
  • Electrical and Electronic Engineering


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