Heterogeneous interfacial properties of ink-jet-printed silver nanoparticulate electrode and organic semiconductor

Dongjo Kim; Sunho Jeong; Hyunjung Shin; Younan Xia; Jooho Moon

doi:10.1002/adma.200702750

Heterogeneous interfacial properties of ink-jet-printed silver nanoparticulate electrode and organic semiconductor

Dongjo Kim, Sunho Jeong, Hyunjung Shin, Younan Xia, Jooho Moon

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

80 Citations (Scopus)

Abstract

A study was conducted to prepare films by assembling silver nanoparticles stabilized by poly(vinyl pyrrolidone) (PVP) and anneal them to highly conductive metal electrodes for fabricating organic thin-film transistors (OTFT). Inks, containing silver nanoparticles were used as ink-jet printing source and drain electrodes. A solution of the oligomeric organic semiconductor α, ω dihexylquaterthiophene (DH4T) was drop-cast between the printed source/drain electrodes that were annealed at varying temperatures to obtain a coplanar OTFT. The contact resistance between the printed electrode and the organic semiconductor was analyzed, using the transmission line model (TLM) and compared with that of a reference interface of a vacuum-deposited electrode.

Original language	English
Pages (from-to)	3084-3089
Number of pages	6
Journal	Advanced Materials
Volume	20
Issue number	16
DOIs	https://doi.org/10.1002/adma.200702750
Publication status	Published - 2008 Aug 18

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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abstract = "A study was conducted to prepare films by assembling silver nanoparticles stabilized by poly(vinyl pyrrolidone) (PVP) and anneal them to highly conductive metal electrodes for fabricating organic thin-film transistors (OTFT). Inks, containing silver nanoparticles were used as ink-jet printing source and drain electrodes. A solution of the oligomeric organic semiconductor α, ω dihexylquaterthiophene (DH4T) was drop-cast between the printed source/drain electrodes that were annealed at varying temperatures to obtain a coplanar OTFT. The contact resistance between the printed electrode and the organic semiconductor was analyzed, using the transmission line model (TLM) and compared with that of a reference interface of a vacuum-deposited electrode.",

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AU - Kim, Dongjo

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AU - Xia, Younan

AU - Moon, Jooho

PY - 2008/8/18

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AB - A study was conducted to prepare films by assembling silver nanoparticles stabilized by poly(vinyl pyrrolidone) (PVP) and anneal them to highly conductive metal electrodes for fabricating organic thin-film transistors (OTFT). Inks, containing silver nanoparticles were used as ink-jet printing source and drain electrodes. A solution of the oligomeric organic semiconductor α, ω dihexylquaterthiophene (DH4T) was drop-cast between the printed source/drain electrodes that were annealed at varying temperatures to obtain a coplanar OTFT. The contact resistance between the printed electrode and the organic semiconductor was analyzed, using the transmission line model (TLM) and compared with that of a reference interface of a vacuum-deposited electrode.

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Heterogeneous interfacial properties of ink-jet-printed silver nanoparticulate electrode and organic semiconductor

Abstract

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