Heteroepitaxial growth of Y2O3 films on Si(100) by reactive ionized cluster beam deposition

S. C. Choi; M. H. Cho; S. W. Whangbo; C. N. Whang; C. E. Hong; N. Y. Kim; J. S. Jeon; S. I. Lee; M. Y. Lee

doi:10.1016/S0168-583X(96)00589-7

Heteroepitaxial growth of Y₂O₃ films on Si(100) by reactive ionized cluster beam deposition

S. C. Choi, M. H. Cho, S. W. Whangbo, C. N. Whang, C. E. Hong, N. Y. Kim, J. S. Jeon, S. I. Lee, M. Y. Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Heteroepitaxial Y₂O₃ films on Si(100) have been grown by the technique of reactive ionized cluster beam (ICB) deposition. The composition of deposited film is investigated by using the X-ray photoelectron spectroscopy (XPS). It was found that the composition ratio of Y to O is 1 to 1.46. Using reflection high energy electron diffraction (RHEED) and glancing angle X-ray diffraction (GXRD), we study the crystallinity of the films. It was noticed that the orientation of deposited film is mainly determined by the substrate temperature and the cluster acceleration energy. We also found that, without acceleration below 800°C, Y₂O₃ films were grown as polycrystalline. Under the condition of 5 kV acceleration voltage above 650°C, we noticed the heteroepitaxial growth of Y₂O₃ film on Si(100) substrate. The epitaxial relationship between Y₂O₃ and Si(100) is presented as Y₂O₃(110)//Si(100) and Y₂O₃[110]//Si[100] or Y₂O₃(110)//Si(100) and Y₂O₃[100]//Si[100].

Original language	English
Pages (from-to)	170-174
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	121
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(96)00589-7
Publication status	Published - 1997 Jan

Bibliographical note

Funding Information:
This work was supportedb y the Korea Science and En-gineeringF oundation (KOSEF), SamsungE lectronics Co., Ltd. and the Basic Science ResearchI nstituteP rogram,Ministry of Education, 1994,P roject No. BSRI-95-2426.

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Instrumentation

Access to Document

10.1016/S0168-583X(96)00589-7

Cite this

Choi, S. C., Cho, M. H., Whangbo, S. W., Whang, C. N., Hong, C. E., Kim, N. Y., Jeon, J. S., Lee, S. I., & Lee, M. Y. (1997). Heteroepitaxial growth of Y₂O₃ films on Si(100) by reactive ionized cluster beam deposition. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 121(1-4), 170-174. https://doi.org/10.1016/S0168-583X(96)00589-7

@article{3969621791a5451a872d011769b0f1e9,

title = "Heteroepitaxial growth of Y2O3 films on Si(100) by reactive ionized cluster beam deposition",

abstract = "Heteroepitaxial Y2O3 films on Si(100) have been grown by the technique of reactive ionized cluster beam (ICB) deposition. The composition of deposited film is investigated by using the X-ray photoelectron spectroscopy (XPS). It was found that the composition ratio of Y to O is 1 to 1.46. Using reflection high energy electron diffraction (RHEED) and glancing angle X-ray diffraction (GXRD), we study the crystallinity of the films. It was noticed that the orientation of deposited film is mainly determined by the substrate temperature and the cluster acceleration energy. We also found that, without acceleration below 800°C, Y2O3 films were grown as polycrystalline. Under the condition of 5 kV acceleration voltage above 650°C, we noticed the heteroepitaxial growth of Y2O3 film on Si(100) substrate. The epitaxial relationship between Y2O3 and Si(100) is presented as Y2O3(110)//Si(100) and Y2O3[110]//Si[100] or Y2O3(110)//Si(100) and Y2O3[100]//Si[100].",

author = "Choi, {S. C.} and Cho, {M. H.} and Whangbo, {S. W.} and Whang, {C. N.} and Hong, {C. E.} and Kim, {N. Y.} and Jeon, {J. S.} and Lee, {S. I.} and Lee, {M. Y.}",

note = "Funding Information: This work was supportedb y the Korea Science and En-gineeringF oundation (KOSEF), SamsungE lectronics Co., Ltd. and the Basic Science ResearchI nstituteP rogram,Ministry of Education, 1994,P roject No. BSRI-95-2426.",

year = "1997",

month = jan,

doi = "10.1016/S0168-583X(96)00589-7",

language = "English",

volume = "121",

pages = "170--174",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

number = "1-4",

}

Choi, SC, Cho, MH, Whangbo, SW, Whang, CN, Hong, CE, Kim, NY, Jeon, JS, Lee, SI & Lee, MY 1997, 'Heteroepitaxial growth of Y₂O₃ films on Si(100) by reactive ionized cluster beam deposition', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 121, no. 1-4, pp. 170-174. https://doi.org/10.1016/S0168-583X(96)00589-7

TY - JOUR

T1 - Heteroepitaxial growth of Y2O3 films on Si(100) by reactive ionized cluster beam deposition

AU - Choi, S. C.

AU - Cho, M. H.

AU - Whangbo, S. W.

AU - Whang, C. N.

AU - Hong, C. E.

AU - Kim, N. Y.

AU - Jeon, J. S.

AU - Lee, S. I.

AU - Lee, M. Y.

N1 - Funding Information: This work was supportedb y the Korea Science and En-gineeringF oundation (KOSEF), SamsungE lectronics Co., Ltd. and the Basic Science ResearchI nstituteP rogram,Ministry of Education, 1994,P roject No. BSRI-95-2426.

PY - 1997/1

Y1 - 1997/1

N2 - Heteroepitaxial Y2O3 films on Si(100) have been grown by the technique of reactive ionized cluster beam (ICB) deposition. The composition of deposited film is investigated by using the X-ray photoelectron spectroscopy (XPS). It was found that the composition ratio of Y to O is 1 to 1.46. Using reflection high energy electron diffraction (RHEED) and glancing angle X-ray diffraction (GXRD), we study the crystallinity of the films. It was noticed that the orientation of deposited film is mainly determined by the substrate temperature and the cluster acceleration energy. We also found that, without acceleration below 800°C, Y2O3 films were grown as polycrystalline. Under the condition of 5 kV acceleration voltage above 650°C, we noticed the heteroepitaxial growth of Y2O3 film on Si(100) substrate. The epitaxial relationship between Y2O3 and Si(100) is presented as Y2O3(110)//Si(100) and Y2O3[110]//Si[100] or Y2O3(110)//Si(100) and Y2O3[100]//Si[100].

AB - Heteroepitaxial Y2O3 films on Si(100) have been grown by the technique of reactive ionized cluster beam (ICB) deposition. The composition of deposited film is investigated by using the X-ray photoelectron spectroscopy (XPS). It was found that the composition ratio of Y to O is 1 to 1.46. Using reflection high energy electron diffraction (RHEED) and glancing angle X-ray diffraction (GXRD), we study the crystallinity of the films. It was noticed that the orientation of deposited film is mainly determined by the substrate temperature and the cluster acceleration energy. We also found that, without acceleration below 800°C, Y2O3 films were grown as polycrystalline. Under the condition of 5 kV acceleration voltage above 650°C, we noticed the heteroepitaxial growth of Y2O3 film on Si(100) substrate. The epitaxial relationship between Y2O3 and Si(100) is presented as Y2O3(110)//Si(100) and Y2O3[110]//Si[100] or Y2O3(110)//Si(100) and Y2O3[100]//Si[100].

UR - http://www.scopus.com/inward/record.url?scp=0031546232&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031546232&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(96)00589-7

DO - 10.1016/S0168-583X(96)00589-7

M3 - Article

AN - SCOPUS:0031546232

SN - 0168-583X

VL - 121

SP - 170

EP - 174

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -