Heteroepitaxial growth of Y2O3 films on Si(100) by reactive ionized cluster beam deposition

S. C. Choi, M. H. Cho, S. W. Whangbo, C. N. Whang, C. E. Hong, N. Y. Kim, J. S. Jeon, S. I. Lee, M. Y. Lee

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Heteroepitaxial Y2O3 films on Si(100) have been grown by the technique of reactive ionized cluster beam (ICB) deposition. The composition of deposited film is investigated by using the X-ray photoelectron spectroscopy (XPS). It was found that the composition ratio of Y to O is 1 to 1.46. Using reflection high energy electron diffraction (RHEED) and glancing angle X-ray diffraction (GXRD), we study the crystallinity of the films. It was noticed that the orientation of deposited film is mainly determined by the substrate temperature and the cluster acceleration energy. We also found that, without acceleration below 800°C, Y2O3 films were grown as polycrystalline. Under the condition of 5 kV acceleration voltage above 650°C, we noticed the heteroepitaxial growth of Y2O3 film on Si(100) substrate. The epitaxial relationship between Y2O3 and Si(100) is presented as Y2O3(110)//Si(100) and Y2O3[110]//Si[100] or Y2O3(110)//Si(100) and Y2O3[100]//Si[100].

Original languageEnglish
Pages (from-to)170-174
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number1-4
Publication statusPublished - 1997 Jan

Bibliographical note

Funding Information:
This work was supportedb y the Korea Science and En-gineeringF oundation (KOSEF), SamsungE lectronics Co., Ltd. and the Basic Science ResearchI nstituteP rogram,Ministry of Education, 1994,P roject No. BSRI-95-2426.

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation


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