Growth, surface morphology, and electrical resistivity of fully strained substoichiometric epitaxial TiNx (0.67 ≤ x < 1.0) layers on MgO(001)

C. S. Shin; S. Rudenja; D. Gall; N. Hellgren; T. Y. Lee; I. Petrov; J. E. Greene

doi:10.1063/1.1629155

Growth, surface morphology, and electrical resistivity of fully strained substoichiometric epitaxial TiN_x (0.67 ≤ x < 1.0) layers on MgO(001)

C. S. Shin, S. Rudenja, D. Gall, N. Hellgren, T. Y. Lee, I. Petrov, J. E. Greene

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

117 Citations (Scopus)

Abstract

Microstructure, surface morphology, relaxed lattice constants, x-ray coherence lengths, and the resistivity of NaCl-structure epitaxial understoichiometric TiN_x(001) layers with controlled N concentrations were determined as a function of x. The films were grown on MgO(001) at 700°C by ultra-high-vacuum reactive sputtering of Ti in mixed Ar/N₂ discharges. Further increases in f_N2 have no affect on layer composition, as the films remained stoichiometric, but strongly influenced film surface morphologies.

Original language	English
Pages (from-to)	356-362
Number of pages	7
Journal	Journal of Applied Physics
Volume	95
Issue number	1
DOIs	https://doi.org/10.1063/1.1629155
Publication status	Published - 2004 Jan 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1063/1.1629155

Cite this

@article{78e250c9d28c40579350637dd26b0b9c,

title = "Growth, surface morphology, and electrical resistivity of fully strained substoichiometric epitaxial TiNx (0.67 ≤ x < 1.0) layers on MgO(001)",

abstract = "Microstructure, surface morphology, relaxed lattice constants, x-ray coherence lengths, and the resistivity of NaCl-structure epitaxial understoichiometric TiNx(001) layers with controlled N concentrations were determined as a function of x. The films were grown on MgO(001) at 700°C by ultra-high-vacuum reactive sputtering of Ti in mixed Ar/N2 discharges. Further increases in fN2 have no affect on layer composition, as the films remained stoichiometric, but strongly influenced film surface morphologies.",

author = "Shin, {C. S.} and S. Rudenja and D. Gall and N. Hellgren and Lee, {T. Y.} and I. Petrov and Greene, {J. E.}",

year = "2004",

month = jan,

day = "1",

doi = "10.1063/1.1629155",

language = "English",

volume = "95",

pages = "356--362",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - Growth, surface morphology, and electrical resistivity of fully strained substoichiometric epitaxial TiNx (0.67 ≤ x < 1.0) layers on MgO(001)

AU - Shin, C. S.

AU - Rudenja, S.

AU - Gall, D.

AU - Hellgren, N.

AU - Lee, T. Y.

AU - Petrov, I.

AU - Greene, J. E.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - Microstructure, surface morphology, relaxed lattice constants, x-ray coherence lengths, and the resistivity of NaCl-structure epitaxial understoichiometric TiNx(001) layers with controlled N concentrations were determined as a function of x. The films were grown on MgO(001) at 700°C by ultra-high-vacuum reactive sputtering of Ti in mixed Ar/N2 discharges. Further increases in fN2 have no affect on layer composition, as the films remained stoichiometric, but strongly influenced film surface morphologies.

AB - Microstructure, surface morphology, relaxed lattice constants, x-ray coherence lengths, and the resistivity of NaCl-structure epitaxial understoichiometric TiNx(001) layers with controlled N concentrations were determined as a function of x. The films were grown on MgO(001) at 700°C by ultra-high-vacuum reactive sputtering of Ti in mixed Ar/N2 discharges. Further increases in fN2 have no affect on layer composition, as the films remained stoichiometric, but strongly influenced film surface morphologies.

UR - http://www.scopus.com/inward/record.url?scp=0942288926&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0942288926&partnerID=8YFLogxK

U2 - 10.1063/1.1629155

DO - 10.1063/1.1629155

M3 - Article

AN - SCOPUS:0942288926

SN - 0021-8979

VL - 95

SP - 356

EP - 362

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

Growth, surface morphology, and electrical resistivity of fully strained substoichiometric epitaxial TiN_x (0.67 ≤ x < 1.0) layers on MgO(001)

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this