Growth of ZnSe on (100) GaAs by atomic layer epitaxy

C. D. Lee; B. H. Lim; C. Lim; H. L. Park; C. H. Chung; S. K. Chang

doi:10.1016/0022-0248(92)90734-Z

Growth of ZnSe on (100) GaAs by atomic layer epitaxy

C. D. Lee, B. H. Lim, C. Lim, H. L. Park, C. H. Chung, S. K. Chang

Department of Physics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

ZnSe films have been grown on (100) oriented GaAs substrates by atomic layer epitaxy (ALE) using ZnCl₂ and H₂Se as source materials. The growth has been performed by using a hydride vapor phase epitaxial growth system. The epilayer thickness was examined for different growth conditions and was found to depend only on the number of substrate rotation cycles for the growth temperature near 450°C. Pseudomorphic ZnSe films on GaAs substrates were achieved by ALE for the growth of 1000 operating cycles. These films show good surface morphology and good crystallographic properties.

Original language	English
Pages (from-to)	148-151
Number of pages	4
Journal	Journal of Crystal Growth
Volume	117
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(92)90734-Z
Publication status	Published - 1992 Feb 2

Bibliographical note

Funding Information:
The authors are indebted to Dr. Y. Kim of KIST for his help in the X-ray diffraction measurements and for valuable discussions. This research was supported by the KOSEF through SPRC in 1991.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(92)90734-Z

Cite this

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title = "Growth of ZnSe on (100) GaAs by atomic layer epitaxy",

abstract = "ZnSe films have been grown on (100) oriented GaAs substrates by atomic layer epitaxy (ALE) using ZnCl2 and H2Se as source materials. The growth has been performed by using a hydride vapor phase epitaxial growth system. The epilayer thickness was examined for different growth conditions and was found to depend only on the number of substrate rotation cycles for the growth temperature near 450°C. Pseudomorphic ZnSe films on GaAs substrates were achieved by ALE for the growth of 1000 operating cycles. These films show good surface morphology and good crystallographic properties.",

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doi = "10.1016/0022-0248(92)90734-Z",

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T1 - Growth of ZnSe on (100) GaAs by atomic layer epitaxy

AU - Lee, C. D.

AU - Lim, B. H.

AU - Lim, C.

AU - Park, H. L.

AU - Chung, C. H.

AU - Chang, S. K.

N1 - Funding Information: The authors are indebted to Dr. Y. Kim of KIST for his help in the X-ray diffraction measurements and for valuable discussions. This research was supported by the KOSEF through SPRC in 1991.

PY - 1992/2/2

Y1 - 1992/2/2

N2 - ZnSe films have been grown on (100) oriented GaAs substrates by atomic layer epitaxy (ALE) using ZnCl2 and H2Se as source materials. The growth has been performed by using a hydride vapor phase epitaxial growth system. The epilayer thickness was examined for different growth conditions and was found to depend only on the number of substrate rotation cycles for the growth temperature near 450°C. Pseudomorphic ZnSe films on GaAs substrates were achieved by ALE for the growth of 1000 operating cycles. These films show good surface morphology and good crystallographic properties.

AB - ZnSe films have been grown on (100) oriented GaAs substrates by atomic layer epitaxy (ALE) using ZnCl2 and H2Se as source materials. The growth has been performed by using a hydride vapor phase epitaxial growth system. The epilayer thickness was examined for different growth conditions and was found to depend only on the number of substrate rotation cycles for the growth temperature near 450°C. Pseudomorphic ZnSe films on GaAs substrates were achieved by ALE for the growth of 1000 operating cycles. These films show good surface morphology and good crystallographic properties.

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Growth of ZnSe on (100) GaAs by atomic layer epitaxy

Abstract

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