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Growth of relaxed Si
1-x
Ge
x
by using oxidation of Si
1-x
Ge
x
B. G. Min
, K. S. Jeon
, Y. H. Pae
,
D. H. Ko
,
M. H. Cho
, T. W. Lee
, D. H. Ko
Department of Materials Science and Engineering
Department of Physics
Research output
:
Contribution to conference
›
Paper
›
peer-review
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Dive into the research topics of 'Growth of relaxed Si
1-x
Ge
x
by using oxidation of Si
1-x
Ge
x
'. Together they form a unique fingerprint.
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Material Science
Oxidation Reaction
100%
Carrier Mobility
33%
Wet Etching
33%
Lattice Constant
33%
Chemical Vapor Deposition
33%
Surface
33%
Ultimate Tensile Strength
33%
Solid Solution
33%