Growth of relaxed Si1-xGex by using oxidation of Si1-xGex

B. G. Min; K. S. Jeon; Y. H. Pae; D. H. Ko; M. H. Cho; T. W. Lee; D. H. Ko

Growth of relaxed Si_1-xGe_x by using oxidation of Si_1-xGe_x

B. G. Min, K. S. Jeon, Y. H. Pae, D. H. Ko, M. H. Cho, T. W. Lee, D. H. Ko

Research output: Contribution to conference › Paper › peer-review

Abstract

The growth of relaxed Si_1-xGex on pile up layer using oxidation was discussed. The most usual method to enhance carrier mobility is forming tensile stress at channel by growing Si on relaxed Si_xGex substrate. The lattice parameter of Si_1-xGex can be changed with Ge contents along Vegard's law because Si_1-xGex is absolute solid solution of Ge and Si. Strained Si_1-xGex was grown on Si (001) wafer by using ultra high vacuum chemical vapor deposition. After than, Ge rich layer was formed by dry oxidation at 800°C and wet etching using 10% HF. The results show that grown Si_1-xGex on pile up layers was relaxed as well as improvement in surface roughening.

Original language	English
Pages	279-280
Number of pages	2
Publication status	Published - 2004
Event	SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States Duration: 2004 Oct 3 → 2004 Oct 8

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Other	SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
Country/Territory	United States
City	Honolulu, HI
Period	04/10/3 → 04/10/8

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@conference{8f13bef2e88745e1b247821d374750e4,

title = "Growth of relaxed Si1-xGex by using oxidation of Si1-xGex",

abstract = "The growth of relaxed Si1-xGex on pile up layer using oxidation was discussed. The most usual method to enhance carrier mobility is forming tensile stress at channel by growing Si on relaxed SixGex substrate. The lattice parameter of Si1-xGex can be changed with Ge contents along Vegard's law because Si1-xGex is absolute solid solution of Ge and Si. Strained Si1-xGex was grown on Si (001) wafer by using ultra high vacuum chemical vapor deposition. After than, Ge rich layer was formed by dry oxidation at 800°C and wet etching using 10% HF. The results show that grown Si1-xGex on pile up layers was relaxed as well as improvement in surface roughening.",

author = "Min, {B. G.} and Jeon, {K. S.} and Pae, {Y. H.} and Ko, {D. H.} and Cho, {M. H.} and Lee, {T. W.} and Ko, {D. H.}",

year = "2004",

language = "English",

pages = "279--280",

note = "SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium ; Conference date: 03-10-2004 Through 08-10-2004",

}

TY - CONF

T1 - Growth of relaxed Si1-xGex by using oxidation of Si1-xGex

AU - Min, B. G.

AU - Jeon, K. S.

AU - Pae, Y. H.

AU - Ko, D. H.

AU - Cho, M. H.

AU - Lee, T. W.

AU - Ko, D. H.

PY - 2004

Y1 - 2004

N2 - The growth of relaxed Si1-xGex on pile up layer using oxidation was discussed. The most usual method to enhance carrier mobility is forming tensile stress at channel by growing Si on relaxed SixGex substrate. The lattice parameter of Si1-xGex can be changed with Ge contents along Vegard's law because Si1-xGex is absolute solid solution of Ge and Si. Strained Si1-xGex was grown on Si (001) wafer by using ultra high vacuum chemical vapor deposition. After than, Ge rich layer was formed by dry oxidation at 800°C and wet etching using 10% HF. The results show that grown Si1-xGex on pile up layers was relaxed as well as improvement in surface roughening.

AB - The growth of relaxed Si1-xGex on pile up layer using oxidation was discussed. The most usual method to enhance carrier mobility is forming tensile stress at channel by growing Si on relaxed SixGex substrate. The lattice parameter of Si1-xGex can be changed with Ge contents along Vegard's law because Si1-xGex is absolute solid solution of Ge and Si. Strained Si1-xGex was grown on Si (001) wafer by using ultra high vacuum chemical vapor deposition. After than, Ge rich layer was formed by dry oxidation at 800°C and wet etching using 10% HF. The results show that grown Si1-xGex on pile up layers was relaxed as well as improvement in surface roughening.

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UR - http://www.scopus.com/inward/citedby.url?scp=17044438313&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:17044438313

SP - 279

EP - 280

T2 - SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium

Y2 - 3 October 2004 through 8 October 2004

ER -

Growth of relaxed Si_1-xGe_x by using oxidation of Si_1-xGe_x

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