Growth mode control and micro-Raman characterization of triangular GaN nanowires in a vapor phase epitaxy process

S. M. Kang, T. I. Shin, S. W. Kim, D. H. Yoon

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The synthesis of single-crystalline GaN nanowires on c-Al2O3 substrates using a vapor phase epitaxy process was studied. The GaN nanowires synthesized at a high NH3 gas flow rate and thus with a sufficient supply of the N source grew via the vapor-solid mechanism, while those synthesized at a low NH3 gas flow rate grew via the vapor-liquid-solid mechanism. The internal stress between the nanowires and the substrate was investigated using micro-Raman spectroscopy. The X-ray diffraction indicated that the triangular GaN nanowires have a single-crystalline hexagonal structure.

Original languageEnglish
Pages (from-to)1296-1298
Number of pages3
JournalMaterials Letters
Volume63
Issue number15
DOIs
Publication statusPublished - 2009 Jun 15

Bibliographical note

Funding Information:
This paper was supported by the Samsung Research Fund, Sungkyunkwan University, 2007.

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Growth mode control and micro-Raman characterization of triangular GaN nanowires in a vapor phase epitaxy process'. Together they form a unique fingerprint.

Cite this