Growth mechanism and electrical properties of tungsten films deposited by plasma-enhanced atomic layer deposition with chloride and metal organic precursors

Yujin Lee; Seunggi Seo; Taewook Nam; Hyunho Lee; Hwi Yoon; Sangkyu Sun; Il Kwon Oh; Sanghun Lee; Bonggeun Shong; Jin Hyung Seo; Jang Hyeon Seok; Hyungjun Kim

doi:10.1016/j.apsusc.2021.150939

Growth mechanism and electrical properties of tungsten films deposited by plasma-enhanced atomic layer deposition with chloride and metal organic precursors

Yujin Lee, Seunggi Seo, Taewook Nam, Hyunho Lee, Hwi Yoon, Sangkyu Sun, Il Kwon Oh, Sanghun Lee, Bonggeun Shong, Jin Hyung Seo, Jang Hyeon Seok, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We compared the growth characteristics and film properties of tungsten (W) thin films prepared by atomic layer deposition (ALD) using two newly synthesized precursors, tungsten pentachloride (WCl₅) and ethylcyclopentadienyltungsten(V) tricarbonyl hydride (HEtCpW(CO)₃), with Ar/H₂ plasma as the reactant. The purpose of this study was to evaluate the suitability of these precursors for W thin films used in interconnect technology. The growth characteristics and film properties were significantly affected by the ligands of the precursors. The chemical compositional analysis results showed that high-purity thin films were obtained using the WCl₅ precursor, compared to the films obtained using the HEtCpW(CO)₃ precursor, which were relatively high in carbon content and oxygen impurities. The W thin films obtained from the WCl₅ precursor showed superior electrical properties compared to those of the HEtCpW(CO)₃ precursor, which were related to the crystallinity and film density in addition to the impurities. These results provide profitable information regarding the selection of a pertinent precursor for the device fabrication.

Original language	English
Article number	150939
Journal	Applied Surface Science
Volume	568
DOIs	https://doi.org/10.1016/j.apsusc.2021.150939
Publication status	Published - 2021 Dec 1

Bibliographical note

Publisher Copyright:
© 2021

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2021.150939

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Lee, Y., Seo, S., Nam, T., Lee, H., Yoon, H., Sun, S., Oh, I. K., Lee, S., Shong, B., Seo, J. H., Seok, J. H., & Kim, H. (2021). Growth mechanism and electrical properties of tungsten films deposited by plasma-enhanced atomic layer deposition with chloride and metal organic precursors. Applied Surface Science, 568, Article 150939. https://doi.org/10.1016/j.apsusc.2021.150939

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title = "Growth mechanism and electrical properties of tungsten films deposited by plasma-enhanced atomic layer deposition with chloride and metal organic precursors",

abstract = "We compared the growth characteristics and film properties of tungsten (W) thin films prepared by atomic layer deposition (ALD) using two newly synthesized precursors, tungsten pentachloride (WCl5) and ethylcyclopentadienyltungsten(V) tricarbonyl hydride (HEtCpW(CO)3), with Ar/H2 plasma as the reactant. The purpose of this study was to evaluate the suitability of these precursors for W thin films used in interconnect technology. The growth characteristics and film properties were significantly affected by the ligands of the precursors. The chemical compositional analysis results showed that high-purity thin films were obtained using the WCl5 precursor, compared to the films obtained using the HEtCpW(CO)3 precursor, which were relatively high in carbon content and oxygen impurities. The W thin films obtained from the WCl5 precursor showed superior electrical properties compared to those of the HEtCpW(CO)3 precursor, which were related to the crystallinity and film density in addition to the impurities. These results provide profitable information regarding the selection of a pertinent precursor for the device fabrication.",

keywords = "Atomic layer deposition, Density functional theory, Halide, Metal organic, Precursor, Tungsten",

author = "Yujin Lee and Seunggi Seo and Taewook Nam and Hyunho Lee and Hwi Yoon and Sangkyu Sun and Oh, {Il Kwon} and Sanghun Lee and Bonggeun Shong and Seo, {Jin Hyung} and Seok, {Jang Hyeon} and Hyungjun Kim",

note = "Publisher Copyright: {\textcopyright} 2021",

year = "2021",

month = dec,

day = "1",

doi = "10.1016/j.apsusc.2021.150939",

language = "English",

volume = "568",

journal = "Applied Surface Science",

issn = "0169-4332",

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TY - JOUR

T1 - Growth mechanism and electrical properties of tungsten films deposited by plasma-enhanced atomic layer deposition with chloride and metal organic precursors

AU - Lee, Yujin

AU - Seo, Seunggi

AU - Nam, Taewook

AU - Lee, Hyunho

AU - Yoon, Hwi

AU - Sun, Sangkyu

AU - Oh, Il Kwon

AU - Lee, Sanghun

AU - Shong, Bonggeun

AU - Seo, Jin Hyung

AU - Seok, Jang Hyeon

AU - Kim, Hyungjun

PY - 2021/12/1

Y1 - 2021/12/1

N2 - We compared the growth characteristics and film properties of tungsten (W) thin films prepared by atomic layer deposition (ALD) using two newly synthesized precursors, tungsten pentachloride (WCl5) and ethylcyclopentadienyltungsten(V) tricarbonyl hydride (HEtCpW(CO)3), with Ar/H2 plasma as the reactant. The purpose of this study was to evaluate the suitability of these precursors for W thin films used in interconnect technology. The growth characteristics and film properties were significantly affected by the ligands of the precursors. The chemical compositional analysis results showed that high-purity thin films were obtained using the WCl5 precursor, compared to the films obtained using the HEtCpW(CO)3 precursor, which were relatively high in carbon content and oxygen impurities. The W thin films obtained from the WCl5 precursor showed superior electrical properties compared to those of the HEtCpW(CO)3 precursor, which were related to the crystallinity and film density in addition to the impurities. These results provide profitable information regarding the selection of a pertinent precursor for the device fabrication.

AB - We compared the growth characteristics and film properties of tungsten (W) thin films prepared by atomic layer deposition (ALD) using two newly synthesized precursors, tungsten pentachloride (WCl5) and ethylcyclopentadienyltungsten(V) tricarbonyl hydride (HEtCpW(CO)3), with Ar/H2 plasma as the reactant. The purpose of this study was to evaluate the suitability of these precursors for W thin films used in interconnect technology. The growth characteristics and film properties were significantly affected by the ligands of the precursors. The chemical compositional analysis results showed that high-purity thin films were obtained using the WCl5 precursor, compared to the films obtained using the HEtCpW(CO)3 precursor, which were relatively high in carbon content and oxygen impurities. The W thin films obtained from the WCl5 precursor showed superior electrical properties compared to those of the HEtCpW(CO)3 precursor, which were related to the crystallinity and film density in addition to the impurities. These results provide profitable information regarding the selection of a pertinent precursor for the device fabrication.

KW - Atomic layer deposition

KW - Density functional theory

KW - Halide

KW - Metal organic

KW - Precursor

KW - Tungsten

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JO - Applied Surface Science

JF - Applied Surface Science

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Growth mechanism and electrical properties of tungsten films deposited by plasma-enhanced atomic layer deposition with chloride and metal organic precursors

Abstract

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