Abstract
Ti-Si-N thin films were deposited by plasma-enhanced atomic layer deposition from Ti Cl4, Si H4, and N2 H2 Ar plasma at 350 °C. For comparison, TiN plasma-enhanced atomic layer deposition (PEALD) was also performed from Ti Cl4. The effects of growth parameters on film properties were studied. Especially, the changes in sequences of precursor-reactant exposure steps were found to produce large change in the growth rates and Si concentration in the films. The results are discussed based upon the molecule-surface reaction mechanisms. Also, the Cu diffusion barrier properties of the PEALD Ti-Si-N films were investigated. PEALD Ti-Si-N films have shown better diffusion barrier properties than PEALD TiN films and can be a promising candidate for future Cu interconnect technology beyond 65 nm technology node.]
| Original language | English |
|---|---|
| Pages (from-to) | 1327-1332 |
| Number of pages | 6 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 24 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2006 May |
Bibliographical note
Funding Information:This work was supported through the project of National Research Laboratory and Brain Korea 21 foundation.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering