Growth kinetics of silicon nanowires by platinum assisted vapour-liquid-solid mechanism

H. Jeong, T. E. Park, H. K. Seong, M. Kim, U. Kim, H. J. Choi

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38 Citations (Scopus)


The growth kinetics of Si nanowires produced by a vapour-liquid-solid (VLS) mechanism in conjunction with Pt and Au catalysts, respectively, was investigated and compared. Pt was employed as a VLS catalyst for single-crystal Si nanowires in a SiCl4-based chemical vapour deposition process. The growth rates were higher with Pt than with Au under all processing conditions. The activation energy was measured as 80 and 130 kJ/mol with the Pt and Au catalysts, respectively. The present results suggest that the rate-determining step is the incorporation of Si atoms in the lattice at the liquid/solid interfaces and, furthermore, the metal catalysts affect this step, resulting in different activation energy.

Original languageEnglish
Pages (from-to)331-334
Number of pages4
JournalChemical Physics Letters
Issue number4-6
Publication statusPublished - 2009 Jan 5

Bibliographical note

Funding Information:
This work was supported by the Program of the National Research Laboratory (Grant R0A-2007-000-20075-0) of the Korean Ministry of Science and Technology (MOST), and the Korean Research Foundation (MOEHRD, KRF-2005-042-D00203).

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry


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