Growth kinetics of silicon nanowires by platinum assisted vapour-liquid-solid mechanism

H. Jeong; T. E. Park; H. K. Seong; M. Kim; U. Kim; H. J. Choi

doi:10.1016/j.cplett.2008.11.022

Growth kinetics of silicon nanowires by platinum assisted vapour-liquid-solid mechanism

H. Jeong, T. E. Park, H. K. Seong, M. Kim, U. Kim, H. J. Choi

Department of Materials Science and Engineering

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38 Citations (Scopus)

Abstract

The growth kinetics of Si nanowires produced by a vapour-liquid-solid (VLS) mechanism in conjunction with Pt and Au catalysts, respectively, was investigated and compared. Pt was employed as a VLS catalyst for single-crystal Si nanowires in a SiCl₄-based chemical vapour deposition process. The growth rates were higher with Pt than with Au under all processing conditions. The activation energy was measured as 80 and 130 kJ/mol with the Pt and Au catalysts, respectively. The present results suggest that the rate-determining step is the incorporation of Si atoms in the lattice at the liquid/solid interfaces and, furthermore, the metal catalysts affect this step, resulting in different activation energy.

Original language	English
Pages (from-to)	331-334
Number of pages	4
Journal	Chemical Physics Letters
Volume	467
Issue number	4-6
DOIs	https://doi.org/10.1016/j.cplett.2008.11.022
Publication status	Published - 2009 Jan 5

Bibliographical note

Funding Information:
This work was supported by the Program of the National Research Laboratory (Grant R0A-2007-000-20075-0) of the Korean Ministry of Science and Technology (MOST), and the Korean Research Foundation (MOEHRD, KRF-2005-042-D00203).

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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10.1016/j.cplett.2008.11.022

Cite this

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title = "Growth kinetics of silicon nanowires by platinum assisted vapour-liquid-solid mechanism",

abstract = "The growth kinetics of Si nanowires produced by a vapour-liquid-solid (VLS) mechanism in conjunction with Pt and Au catalysts, respectively, was investigated and compared. Pt was employed as a VLS catalyst for single-crystal Si nanowires in a SiCl4-based chemical vapour deposition process. The growth rates were higher with Pt than with Au under all processing conditions. The activation energy was measured as 80 and 130 kJ/mol with the Pt and Au catalysts, respectively. The present results suggest that the rate-determining step is the incorporation of Si atoms in the lattice at the liquid/solid interfaces and, furthermore, the metal catalysts affect this step, resulting in different activation energy.",

author = "H. Jeong and Park, {T. E.} and Seong, {H. K.} and M. Kim and U. Kim and Choi, {H. J.}",

note = "Funding Information: This work was supported by the Program of the National Research Laboratory (Grant R0A-2007-000-20075-0) of the Korean Ministry of Science and Technology (MOST), and the Korean Research Foundation (MOEHRD, KRF-2005-042-D00203). ",

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AU - Jeong, H.

AU - Park, T. E.

AU - Seong, H. K.

AU - Kim, M.

AU - Kim, U.

AU - Choi, H. J.

N1 - Funding Information: This work was supported by the Program of the National Research Laboratory (Grant R0A-2007-000-20075-0) of the Korean Ministry of Science and Technology (MOST), and the Korean Research Foundation (MOEHRD, KRF-2005-042-D00203).

PY - 2009/1/5

Y1 - 2009/1/5

N2 - The growth kinetics of Si nanowires produced by a vapour-liquid-solid (VLS) mechanism in conjunction with Pt and Au catalysts, respectively, was investigated and compared. Pt was employed as a VLS catalyst for single-crystal Si nanowires in a SiCl4-based chemical vapour deposition process. The growth rates were higher with Pt than with Au under all processing conditions. The activation energy was measured as 80 and 130 kJ/mol with the Pt and Au catalysts, respectively. The present results suggest that the rate-determining step is the incorporation of Si atoms in the lattice at the liquid/solid interfaces and, furthermore, the metal catalysts affect this step, resulting in different activation energy.

AB - The growth kinetics of Si nanowires produced by a vapour-liquid-solid (VLS) mechanism in conjunction with Pt and Au catalysts, respectively, was investigated and compared. Pt was employed as a VLS catalyst for single-crystal Si nanowires in a SiCl4-based chemical vapour deposition process. The growth rates were higher with Pt than with Au under all processing conditions. The activation energy was measured as 80 and 130 kJ/mol with the Pt and Au catalysts, respectively. The present results suggest that the rate-determining step is the incorporation of Si atoms in the lattice at the liquid/solid interfaces and, furthermore, the metal catalysts affect this step, resulting in different activation energy.

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JF - Chemical Physics Letters

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Growth kinetics of silicon nanowires by platinum assisted vapour-liquid-solid mechanism

Abstract

Bibliographical note

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