Growth characteristics of graphene synthesized via chemical vapor deposition using carbon tetrabromide precursor

Taejin Choi; Hanearl Jung; Chang Wan Lee; Ki Yeung Mun; Soo Hyun Kim; Jusang Park; Hyungjun Kim

doi:10.1016/j.apsusc.2015.03.093

Growth characteristics of graphene synthesized via chemical vapor deposition using carbon tetrabromide precursor

Taejin Choi, Hanearl Jung, Chang Wan Lee, Ki Yeung Mun, Soo Hyun Kim, Jusang Park, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

A carbon tetrabromide (CBr ₄ ) precursor was employed for the chemical vapor deposition (CVD) of graphene, and the graphene growth characteristics as functions of the following key factors were then investigated: growth time, growth temperature, and the partial pressure of the precursor. The graphene was transferred onto a SiO ₂ /Si substrate and characterized using transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy, and the electrical properties were measured through the fabrication of field-effect transistors. Our results show that high yield and controllable growth are possible via CVD used with a CBr ₄ precursor. Thus, CBr ₄ precursor is a new alternative candidate for use in the mass production of graphene.

Original language	English
Pages (from-to)	128-132
Number of pages	5
Journal	Applied Surface Science
Volume	343
DOIs	https://doi.org/10.1016/j.apsusc.2015.03.093
Publication status	Published - 2015 Jul 15

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF), funded by the Korea Ministry of Science, ICT, & Future Planning (MSIP) (No. NRF-2014R1A2A1A11052588) , the Fundamental R&D Program for Core Technology of Materials, funded by the Ministry of Trade, Industry and Energy , Republic of Korea (No. 10050296) , and the Center for Integrated Smart Sensors, funded by the Ministry of Science, ICT & Future Planning, as a Global Frontier Project (CISS-2011-0031848).

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2015.03.093

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title = "Growth characteristics of graphene synthesized via chemical vapor deposition using carbon tetrabromide precursor",

abstract = " A carbon tetrabromide (CBr 4 ) precursor was employed for the chemical vapor deposition (CVD) of graphene, and the graphene growth characteristics as functions of the following key factors were then investigated: growth time, growth temperature, and the partial pressure of the precursor. The graphene was transferred onto a SiO 2 /Si substrate and characterized using transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy, and the electrical properties were measured through the fabrication of field-effect transistors. Our results show that high yield and controllable growth are possible via CVD used with a CBr 4 precursor. Thus, CBr 4 precursor is a new alternative candidate for use in the mass production of graphene. ",

author = "Taejin Choi and Hanearl Jung and Lee, {Chang Wan} and Mun, {Ki Yeung} and Kim, {Soo Hyun} and Jusang Park and Hyungjun Kim",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF), funded by the Korea Ministry of Science, ICT, & Future Planning (MSIP) (No. NRF-2014R1A2A1A11052588) , the Fundamental R&D Program for Core Technology of Materials, funded by the Ministry of Trade, Industry and Energy , Republic of Korea (No. 10050296) , and the Center for Integrated Smart Sensors, funded by the Ministry of Science, ICT & Future Planning, as a Global Frontier Project (CISS-2011-0031848). ",

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doi = "10.1016/j.apsusc.2015.03.093",

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AU - Choi, Taejin

AU - Jung, Hanearl

AU - Lee, Chang Wan

AU - Mun, Ki Yeung

AU - Kim, Soo Hyun

AU - Park, Jusang

AU - Kim, Hyungjun

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF), funded by the Korea Ministry of Science, ICT, & Future Planning (MSIP) (No. NRF-2014R1A2A1A11052588) , the Fundamental R&D Program for Core Technology of Materials, funded by the Ministry of Trade, Industry and Energy , Republic of Korea (No. 10050296) , and the Center for Integrated Smart Sensors, funded by the Ministry of Science, ICT & Future Planning, as a Global Frontier Project (CISS-2011-0031848).

PY - 2015/7/15

Y1 - 2015/7/15

N2 - A carbon tetrabromide (CBr 4 ) precursor was employed for the chemical vapor deposition (CVD) of graphene, and the graphene growth characteristics as functions of the following key factors were then investigated: growth time, growth temperature, and the partial pressure of the precursor. The graphene was transferred onto a SiO 2 /Si substrate and characterized using transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy, and the electrical properties were measured through the fabrication of field-effect transistors. Our results show that high yield and controllable growth are possible via CVD used with a CBr 4 precursor. Thus, CBr 4 precursor is a new alternative candidate for use in the mass production of graphene.

AB - A carbon tetrabromide (CBr 4 ) precursor was employed for the chemical vapor deposition (CVD) of graphene, and the graphene growth characteristics as functions of the following key factors were then investigated: growth time, growth temperature, and the partial pressure of the precursor. The graphene was transferred onto a SiO 2 /Si substrate and characterized using transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy, and the electrical properties were measured through the fabrication of field-effect transistors. Our results show that high yield and controllable growth are possible via CVD used with a CBr 4 precursor. Thus, CBr 4 precursor is a new alternative candidate for use in the mass production of graphene.

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JO - Applied Surface Science

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Growth characteristics of graphene synthesized via chemical vapor deposition using carbon tetrabromide precursor

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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