Growth characteristics and film properties of cerium dioxide prepared by plasma-enhanced atomic layer deposition

Woo Hee Kim; Min Kyu Kim; W. J. Maeng; Julien Gatineau; Venkat Pallem; Christian Dussarrat; Atif Noori; David Thompson; Schubert Chu; Hyungjun Kim

doi:10.1149/1.3594766

Growth characteristics and film properties of cerium dioxide prepared by plasma-enhanced atomic layer deposition

Woo Hee Kim, Min Kyu Kim, W. J. Maeng, Julien Gatineau, Venkat Pallem, Christian Dussarrat, Atif Noori, David Thompson, Schubert Chu, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

CeO₂ thin films were deposited by plasma-enhanced atomic layer deposition (PE-ALD). Novel Ce(iPrCp)₃ [tris(isopropyl- cyclopentadienyl)cerium] was used as a Ce precursor, which showed clean evaporation with no residue and good thermal stability. For PE-ALD, O ₂ plasma was used as an oxidizing reactant. The PE-ALD process exhibited ALD mode with good self-saturation behavior and linear growth without any nucleation delay on Si substrate as a function of growth cycles. Additionally, it produced highly pure and nearly stoichiometric CeO₂ films with polycrystalline cubic phases. Electrical properties of Al/CeO ₂/p-Si capacitors were improved by O₂ annealing with reduction in interface state density (D_it), hysteresis, effective oxide charge (Q_eff) and leakage current density. These experimental results indicate that the PE-ALD CeO₂ using Ce(iPrCp)₃ precursor can be viable option as a future high-k material in the microelectronic industry.

Original language	English
Pages (from-to)	G169-G172
Journal	Journal of the Electrochemical Society
Volume	158
Issue number	8
DOIs	https://doi.org/10.1149/1.3594766
Publication status	Published - 2011 Aug

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "Growth characteristics and film properties of cerium dioxide prepared by plasma-enhanced atomic layer deposition",

abstract = "CeO2 thin films were deposited by plasma-enhanced atomic layer deposition (PE-ALD). Novel Ce(iPrCp)3 [tris(isopropyl- cyclopentadienyl)cerium] was used as a Ce precursor, which showed clean evaporation with no residue and good thermal stability. For PE-ALD, O 2 plasma was used as an oxidizing reactant. The PE-ALD process exhibited ALD mode with good self-saturation behavior and linear growth without any nucleation delay on Si substrate as a function of growth cycles. Additionally, it produced highly pure and nearly stoichiometric CeO2 films with polycrystalline cubic phases. Electrical properties of Al/CeO 2/p-Si capacitors were improved by O2 annealing with reduction in interface state density (Dit), hysteresis, effective oxide charge (Qeff) and leakage current density. These experimental results indicate that the PE-ALD CeO2 using Ce(iPrCp)3 precursor can be viable option as a future high-k material in the microelectronic industry.",

author = "Kim, {Woo Hee} and Kim, {Min Kyu} and Maeng, {W. J.} and Julien Gatineau and Venkat Pallem and Christian Dussarrat and Atif Noori and David Thompson and Schubert Chu and Hyungjun Kim",

year = "2011",

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doi = "10.1149/1.3594766",

language = "English",

volume = "158",

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T1 - Growth characteristics and film properties of cerium dioxide prepared by plasma-enhanced atomic layer deposition

AU - Kim, Woo Hee

AU - Kim, Min Kyu

AU - Maeng, W. J.

AU - Gatineau, Julien

AU - Pallem, Venkat

AU - Dussarrat, Christian

AU - Noori, Atif

AU - Thompson, David

AU - Chu, Schubert

AU - Kim, Hyungjun

PY - 2011/8

Y1 - 2011/8

N2 - CeO2 thin films were deposited by plasma-enhanced atomic layer deposition (PE-ALD). Novel Ce(iPrCp)3 [tris(isopropyl- cyclopentadienyl)cerium] was used as a Ce precursor, which showed clean evaporation with no residue and good thermal stability. For PE-ALD, O 2 plasma was used as an oxidizing reactant. The PE-ALD process exhibited ALD mode with good self-saturation behavior and linear growth without any nucleation delay on Si substrate as a function of growth cycles. Additionally, it produced highly pure and nearly stoichiometric CeO2 films with polycrystalline cubic phases. Electrical properties of Al/CeO 2/p-Si capacitors were improved by O2 annealing with reduction in interface state density (Dit), hysteresis, effective oxide charge (Qeff) and leakage current density. These experimental results indicate that the PE-ALD CeO2 using Ce(iPrCp)3 precursor can be viable option as a future high-k material in the microelectronic industry.

AB - CeO2 thin films were deposited by plasma-enhanced atomic layer deposition (PE-ALD). Novel Ce(iPrCp)3 [tris(isopropyl- cyclopentadienyl)cerium] was used as a Ce precursor, which showed clean evaporation with no residue and good thermal stability. For PE-ALD, O 2 plasma was used as an oxidizing reactant. The PE-ALD process exhibited ALD mode with good self-saturation behavior and linear growth without any nucleation delay on Si substrate as a function of growth cycles. Additionally, it produced highly pure and nearly stoichiometric CeO2 films with polycrystalline cubic phases. Electrical properties of Al/CeO 2/p-Si capacitors were improved by O2 annealing with reduction in interface state density (Dit), hysteresis, effective oxide charge (Qeff) and leakage current density. These experimental results indicate that the PE-ALD CeO2 using Ce(iPrCp)3 precursor can be viable option as a future high-k material in the microelectronic industry.

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Growth characteristics and film properties of cerium dioxide prepared by plasma-enhanced atomic layer deposition

Abstract

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UN SDGs

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