Growth characteristics and electrical properties of Ta2O 5 grown by thermal and O3-based atomic layer deposition on TiN substrates for metal-insulator-metal capacitor applications

Min Kyu Kim; Woo Hee Kim; Taeyoon Lee; Hyungjun Kim

doi:10.1016/j.tsf.2013.06.050

Growth characteristics and electrical properties of Ta₂O ₅ grown by thermal and O₃-based atomic layer deposition on TiN substrates for metal-insulator-metal capacitor applications

Min Kyu Kim, Woo Hee Kim, Taeyoon Lee, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

We compared the suitability of tantalum pentoxide (Ta₂O ₅) films produced via thermal and ozone based atomic layer deposition (Th-ALD and O₃-ALD, respectively) using pentaethoxytantalum (PET) as a Ta precursor for use as a capacitor insulator in metal-insulator-metal configurations. H₂O and O₃ were used as reactants for Th-ALD and O₃-ALD Ta₂O₅, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure Ta₂O₅ films. However, O₃-ALD Ta₂O₅ films showed higher growth rates (1.1 Å/cycle), density (7.85 g/cm³) and dielectric constant values (~ 46) compared to those of Th-ALD Ta₂O₅ (0.9 Å/cycle, 7.3 g/cm³ and ~ 40, respectively).

Original language	English
Pages (from-to)	71-75
Number of pages	5
Journal	Thin Solid Films
Volume	542
DOIs	https://doi.org/10.1016/j.tsf.2013.06.050
Publication status	Published - 2013 Sept 2

Bibliographical note

Funding Information:
This work was supported by the Technology Innovation Program funded by the Future-Based Technology Development Program (Nano Fields) through the National Research Foundation of Korea (NRF) , which is funded by the Ministry of Education, Science and Technology (No. 2012-0006217 ) and the Converging Research Center Program through the Ministry of Education, Science and Technology ( 2012K001311 ). This work was also supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MEST) (No. 2011-0028594 ). Additionally, this work was supported by the Industrial Strategic Technology Development Program ( 10041926 , Development of high density plasma technologies for thin film deposition of nanoscale semiconductor and flexible display processing) funded by the Ministry of Knowledge Economy (MKE), Korea .

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2013.06.050

Cite this

@article{35f23328474e4032ae1bae2d28443ee4,

title = "Growth characteristics and electrical properties of Ta2O 5 grown by thermal and O3-based atomic layer deposition on TiN substrates for metal-insulator-metal capacitor applications",

abstract = "We compared the suitability of tantalum pentoxide (Ta2O 5) films produced via thermal and ozone based atomic layer deposition (Th-ALD and O3-ALD, respectively) using pentaethoxytantalum (PET) as a Ta precursor for use as a capacitor insulator in metal-insulator-metal configurations. H2O and O3 were used as reactants for Th-ALD and O3-ALD Ta2O5, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure Ta2O5 films. However, O3-ALD Ta2O5 films showed higher growth rates (1.1 {\AA}/cycle), density (7.85 g/cm3) and dielectric constant values (~ 46) compared to those of Th-ALD Ta2O5 (0.9 {\AA}/cycle, 7.3 g/cm3 and ~ 40, respectively).",

author = "Kim, {Min Kyu} and Kim, {Woo Hee} and Taeyoon Lee and Hyungjun Kim",

note = "Funding Information: This work was supported by the Technology Innovation Program funded by the Future-Based Technology Development Program (Nano Fields) through the National Research Foundation of Korea (NRF) , which is funded by the Ministry of Education, Science and Technology (No. 2012-0006217 ) and the Converging Research Center Program through the Ministry of Education, Science and Technology ( 2012K001311 ). This work was also supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MEST) (No. 2011-0028594 ). Additionally, this work was supported by the Industrial Strategic Technology Development Program ( 10041926 , Development of high density plasma technologies for thin film deposition of nanoscale semiconductor and flexible display processing) funded by the Ministry of Knowledge Economy (MKE), Korea .",

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AU - Kim, Min Kyu

AU - Kim, Woo Hee

AU - Lee, Taeyoon

AU - Kim, Hyungjun

N1 - Funding Information: This work was supported by the Technology Innovation Program funded by the Future-Based Technology Development Program (Nano Fields) through the National Research Foundation of Korea (NRF) , which is funded by the Ministry of Education, Science and Technology (No. 2012-0006217 ) and the Converging Research Center Program through the Ministry of Education, Science and Technology ( 2012K001311 ). This work was also supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MEST) (No. 2011-0028594 ). Additionally, this work was supported by the Industrial Strategic Technology Development Program ( 10041926 , Development of high density plasma technologies for thin film deposition of nanoscale semiconductor and flexible display processing) funded by the Ministry of Knowledge Economy (MKE), Korea .

PY - 2013/9/2

Y1 - 2013/9/2

N2 - We compared the suitability of tantalum pentoxide (Ta2O 5) films produced via thermal and ozone based atomic layer deposition (Th-ALD and O3-ALD, respectively) using pentaethoxytantalum (PET) as a Ta precursor for use as a capacitor insulator in metal-insulator-metal configurations. H2O and O3 were used as reactants for Th-ALD and O3-ALD Ta2O5, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure Ta2O5 films. However, O3-ALD Ta2O5 films showed higher growth rates (1.1 Å/cycle), density (7.85 g/cm3) and dielectric constant values (~ 46) compared to those of Th-ALD Ta2O5 (0.9 Å/cycle, 7.3 g/cm3 and ~ 40, respectively).

AB - We compared the suitability of tantalum pentoxide (Ta2O 5) films produced via thermal and ozone based atomic layer deposition (Th-ALD and O3-ALD, respectively) using pentaethoxytantalum (PET) as a Ta precursor for use as a capacitor insulator in metal-insulator-metal configurations. H2O and O3 were used as reactants for Th-ALD and O3-ALD Ta2O5, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure Ta2O5 films. However, O3-ALD Ta2O5 films showed higher growth rates (1.1 Å/cycle), density (7.85 g/cm3) and dielectric constant values (~ 46) compared to those of Th-ALD Ta2O5 (0.9 Å/cycle, 7.3 g/cm3 and ~ 40, respectively).

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