Growth behavior of Bi2Te3 and Sb2Te3 thin films on graphene substrate grown by plasma-enhanced chemical vapor deposition

Chang Wan Lee; Gun Hwan Kim; Seong Gu Kang; Min A. Kang; Ki Seok An; Hyungjun Kim; Young Kuk Lee

doi:10.1002/pssr.201600369

Growth behavior of Bi₂Te₃ and Sb₂Te₃ thin films on graphene substrate grown by plasma-enhanced chemical vapor deposition

Chang Wan Lee, Gun Hwan Kim, Seong Gu Kang, Min A. Kang, Ki Seok An, Hyungjun Kim, Young Kuk Lee

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

A comparative study of the substrate effect on the growth mechanism of chalcogenide Bi₂Te₃ and Sb₂Te₃ thin films was carried out. Obvious microstructural discrepancy in both the as-deposited Bi₂Te₃ and Sb₂Te₃ thin films was observed when grown on graphene or SiO₂/Si substrate. Bi₂Te₃ and Sb₂Te₃ thin films deposited on the graphene substrate were observed to be grown epitaxially along c-axis and show very smooth surface compared to that on SiO₂/Si substrate. Based on the experimental results of this study, the initial adsorption sites on graphene substrate during deposition process, which had been discussed theoretically, could be demonstrated empirically.

Original language	English
Article number	1600369
Journal	Physica Status Solidi - Rapid Research Letters
Volume	11
Issue number	3
DOIs	https://doi.org/10.1002/pssr.201600369
Publication status	Published - 2017 Mar 1

Bibliographical note

Funding Information:
We would like to acknowledge the financial support from the R&D Convergence Program of NST (National Research Council of Science &Technology) of Republic of Korea. Also, this work was supported by Korea Research Institute of Chemical Technology (SI1603-02, Organometallics and Device Fabrication for IT-ET Convergence Project).

Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

Access to Document

10.1002/pssr.201600369

Cite this

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title = "Growth behavior of Bi2Te3 and Sb2Te3 thin films on graphene substrate grown by plasma-enhanced chemical vapor deposition",

abstract = "A comparative study of the substrate effect on the growth mechanism of chalcogenide Bi2Te3 and Sb2Te3 thin films was carried out. Obvious microstructural discrepancy in both the as-deposited Bi2Te3 and Sb2Te3 thin films was observed when grown on graphene or SiO2/Si substrate. Bi2Te3 and Sb2Te3 thin films deposited on the graphene substrate were observed to be grown epitaxially along c-axis and show very smooth surface compared to that on SiO2/Si substrate. Based on the experimental results of this study, the initial adsorption sites on graphene substrate during deposition process, which had been discussed theoretically, could be demonstrated empirically.",

author = "Lee, {Chang Wan} and Kim, {Gun Hwan} and Kang, {Seong Gu} and Kang, {Min A.} and An, {Ki Seok} and Hyungjun Kim and Lee, {Young Kuk}",

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T1 - Growth behavior of Bi2Te3 and Sb2Te3 thin films on graphene substrate grown by plasma-enhanced chemical vapor deposition

AU - Lee, Chang Wan

AU - Kim, Gun Hwan

AU - Kang, Seong Gu

AU - Kang, Min A.

AU - An, Ki Seok

AU - Kim, Hyungjun

AU - Lee, Young Kuk

N1 - Funding Information: We would like to acknowledge the financial support from the R&D Convergence Program of NST (National Research Council of Science &Technology) of Republic of Korea. Also, this work was supported by Korea Research Institute of Chemical Technology (SI1603-02, Organometallics and Device Fabrication for IT-ET Convergence Project). Publisher Copyright: © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2017/3/1

Y1 - 2017/3/1

N2 - A comparative study of the substrate effect on the growth mechanism of chalcogenide Bi2Te3 and Sb2Te3 thin films was carried out. Obvious microstructural discrepancy in both the as-deposited Bi2Te3 and Sb2Te3 thin films was observed when grown on graphene or SiO2/Si substrate. Bi2Te3 and Sb2Te3 thin films deposited on the graphene substrate were observed to be grown epitaxially along c-axis and show very smooth surface compared to that on SiO2/Si substrate. Based on the experimental results of this study, the initial adsorption sites on graphene substrate during deposition process, which had been discussed theoretically, could be demonstrated empirically.

AB - A comparative study of the substrate effect on the growth mechanism of chalcogenide Bi2Te3 and Sb2Te3 thin films was carried out. Obvious microstructural discrepancy in both the as-deposited Bi2Te3 and Sb2Te3 thin films was observed when grown on graphene or SiO2/Si substrate. Bi2Te3 and Sb2Te3 thin films deposited on the graphene substrate were observed to be grown epitaxially along c-axis and show very smooth surface compared to that on SiO2/Si substrate. Based on the experimental results of this study, the initial adsorption sites on graphene substrate during deposition process, which had been discussed theoretically, could be demonstrated empirically.

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