Growth behavior and microstructure of Ge self-assembled islands on nanometer-scale patterned Si substrate

Tae Sik Yoon, Zuoming Zhao, Wen Feng, Biyun Li, Jian Liu, Ya Hong Xie, Du Yeol Ryu, Thomas P. Russell, Hyun Mi Kim, Ki Bum Kim

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


We investigate the growth behavior and microstructure of Ge self-assembled islands of nanometer dimension on Si (0 0 1) substrate patterned with hexagonally ordered holes of ∼25 nm depth, ∼30 nm diameter, and ∼7×1010 cm-2 density. At 9 Å Ge coverage and 650 °C growth temperature, Ge islands preferentially nucleate inside the holes, starting at the bottom perimeter. Approximately 14% of the holes are filled by Ge islands. Moiré fringe analysis reveals partial strain relaxation of about 72% on average, which is not uniform even within a single island. Crystalline defects such as dislocation are observed from islands smaller than 30 nm. Increased Ge coverage to 70 Å forms larger aggregates of many interconnected islands with slightly increased filling factor of about 17% of the holes. Reducing the growth temperature to 280 °C results in much higher density of islands with a filling factor of about 80% and with some aggregates. The results described in this report represent a potential approach for fabricating semiconductor quantum dots via epitaxy with higher than 1010 cm-2 density.

Original languageEnglish
Pages (from-to)369-373
Number of pages5
JournalJournal of Crystal Growth
Issue number2
Publication statusPublished - 2006 May 1

Bibliographical note

Funding Information:
The authors acknowledge the support of the Microelectronic Advanced Research Corporation (MARCO) and its Focus Center on Functional Engineered Nano Architectonics (FENA).

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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