Growth and physical properties of epitaxial HfN layers on MgO(001)

H. S. Seo, T. Y. Lee, J. G. Wen, I. Petrov, J. E. Greene, D. Gall

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The growth and physical properties of epitaxial stoichiometric HfN layers deposited on MgO(001) by using ultrahigh vaccum reactive magnetron sputter deposition were analyzed. The high resolution x-ray diffraction, Rutherford backscattering spectroscopy (RBS) and high resolution cross-sectional transmission electron microscopy showed that HfN grows epitaxially with a cube-on-cube orientational relationship to the substrate. It was found that the layers had room-temperature bulk lattice constant of 0.4524 nm. The electronic transport measurements showed that the HfN is metallic with a room-temperature resistivity of 14.2 μωcn, an n-type carrier concentration of 4.8×10 21 cm -3.

Original languageEnglish
Pages (from-to)878-884
Number of pages7
JournalJournal of Applied Physics
Issue number1
Publication statusPublished - 2004 Jul 1

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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