Growth and characterization of Mg-doped GaN nanowire synthesized by the thermal evaporation method

Sachindra Nath Das; Subhasish Patra; Jyoti Prakash Kar; Min Jung Lee; Sung Hwan Hwang; Tae Il Lee; Jae Min Myoung

doi:10.1016/j.matlet.2013.05.062

Growth and characterization of Mg-doped GaN nanowire synthesized by the thermal evaporation method

Sachindra Nath Das, Subhasish Patra, Jyoti Prakash Kar, Min Jung Lee, Sung Hwan Hwang, Tae Il Lee, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The Mg-doped GaN nanowires with very high aspect ratio grew by the Vapor-Liquid-Solid method onto Si substrates using Ni as catalyst and Mg ₃N₂ powder as Mg source. Structural and optical characterizations of un-doped and Mg-doped GaN nanowires were investigated. The XRD shows that the relative intensities of other peaks [in comparison to (100)] increases with the incorporation of Mg. It indicates that Mg changes the preferential growth direction of nanowires. PL studies revealed that without doped samples a few donor levels rose due to structural defects. The incorporation of Mg produces a few additional donor levels (arising due to structural defects) as well as acceptor levels (arising due to Mg doping). These Mg-doped nanowires may be used as p-type nanowire.

Original language	English
Pages (from-to)	352-355
Number of pages	4
Journal	Materials Letters
Volume	106
DOIs	https://doi.org/10.1016/j.matlet.2013.05.062
Publication status	Published - 2013

Bibliographical note

Funding Information:
This research was supported by WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology ( R32-20031 ). The author (S.N. Das) thanks University Grant Commission, Government of India, for granting financial support to start up a new Lab at his college. J.P. Kar and T. I. Lee were supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST)(2012-K1A3A1A19-038371).

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.matlet.2013.05.062

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title = "Growth and characterization of Mg-doped GaN nanowire synthesized by the thermal evaporation method",

abstract = "The Mg-doped GaN nanowires with very high aspect ratio grew by the Vapor-Liquid-Solid method onto Si substrates using Ni as catalyst and Mg 3N2 powder as Mg source. Structural and optical characterizations of un-doped and Mg-doped GaN nanowires were investigated. The XRD shows that the relative intensities of other peaks [in comparison to (100)] increases with the incorporation of Mg. It indicates that Mg changes the preferential growth direction of nanowires. PL studies revealed that without doped samples a few donor levels rose due to structural defects. The incorporation of Mg produces a few additional donor levels (arising due to structural defects) as well as acceptor levels (arising due to Mg doping). These Mg-doped nanowires may be used as p-type nanowire.",

author = "{Nath Das}, Sachindra and Subhasish Patra and {Prakash Kar}, Jyoti and Lee, {Min Jung} and {Hwan Hwang}, Sung and {Il Lee}, Tae and Myoung, {Jae Min}",

note = "Funding Information: This research was supported by WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology ( R32-20031 ). The author (S.N. Das) thanks University Grant Commission, Government of India, for granting financial support to start up a new Lab at his college. J.P. Kar and T. I. Lee were supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST)(2012-K1A3A1A19-038371).",

year = "2013",

doi = "10.1016/j.matlet.2013.05.062",

language = "English",

volume = "106",

pages = "352--355",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

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T1 - Growth and characterization of Mg-doped GaN nanowire synthesized by the thermal evaporation method

AU - Nath Das, Sachindra

AU - Patra, Subhasish

AU - Prakash Kar, Jyoti

AU - Lee, Min Jung

AU - Hwan Hwang, Sung

AU - Il Lee, Tae

AU - Myoung, Jae Min

N1 - Funding Information: This research was supported by WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology ( R32-20031 ). The author (S.N. Das) thanks University Grant Commission, Government of India, for granting financial support to start up a new Lab at his college. J.P. Kar and T. I. Lee were supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST)(2012-K1A3A1A19-038371).

PY - 2013

Y1 - 2013

N2 - The Mg-doped GaN nanowires with very high aspect ratio grew by the Vapor-Liquid-Solid method onto Si substrates using Ni as catalyst and Mg 3N2 powder as Mg source. Structural and optical characterizations of un-doped and Mg-doped GaN nanowires were investigated. The XRD shows that the relative intensities of other peaks [in comparison to (100)] increases with the incorporation of Mg. It indicates that Mg changes the preferential growth direction of nanowires. PL studies revealed that without doped samples a few donor levels rose due to structural defects. The incorporation of Mg produces a few additional donor levels (arising due to structural defects) as well as acceptor levels (arising due to Mg doping). These Mg-doped nanowires may be used as p-type nanowire.

AB - The Mg-doped GaN nanowires with very high aspect ratio grew by the Vapor-Liquid-Solid method onto Si substrates using Ni as catalyst and Mg 3N2 powder as Mg source. Structural and optical characterizations of un-doped and Mg-doped GaN nanowires were investigated. The XRD shows that the relative intensities of other peaks [in comparison to (100)] increases with the incorporation of Mg. It indicates that Mg changes the preferential growth direction of nanowires. PL studies revealed that without doped samples a few donor levels rose due to structural defects. The incorporation of Mg produces a few additional donor levels (arising due to structural defects) as well as acceptor levels (arising due to Mg doping). These Mg-doped nanowires may be used as p-type nanowire.

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DO - 10.1016/j.matlet.2013.05.062

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EP - 355

JO - Materials Letters

JF - Materials Letters

ER -

Growth and characterization of Mg-doped GaN nanowire synthesized by the thermal evaporation method

Abstract

Bibliographical note

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