Growth and characterization of Mg-doped GaN nanowire synthesized by the thermal evaporation method

Sachindra Nath Das, Subhasish Patra, Jyoti Prakash Kar, Min Jung Lee, Sung Hwan Hwang, Tae Il Lee, Jae Min Myoung

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10 Citations (Scopus)


The Mg-doped GaN nanowires with very high aspect ratio grew by the Vapor-Liquid-Solid method onto Si substrates using Ni as catalyst and Mg 3N2 powder as Mg source. Structural and optical characterizations of un-doped and Mg-doped GaN nanowires were investigated. The XRD shows that the relative intensities of other peaks [in comparison to (100)] increases with the incorporation of Mg. It indicates that Mg changes the preferential growth direction of nanowires. PL studies revealed that without doped samples a few donor levels rose due to structural defects. The incorporation of Mg produces a few additional donor levels (arising due to structural defects) as well as acceptor levels (arising due to Mg doping). These Mg-doped nanowires may be used as p-type nanowire.

Original languageEnglish
Pages (from-to)352-355
Number of pages4
JournalMaterials Letters
Publication statusPublished - 2013

Bibliographical note

Funding Information:
This research was supported by WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology ( R32-20031 ). The author (S.N. Das) thanks University Grant Commission, Government of India, for granting financial support to start up a new Lab at his college. J.P. Kar and T. I. Lee were supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST)(2012-K1A3A1A19-038371).

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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