Group IV Transition Metal (M = Zr, Hf) Precursors for High-κ Metal Oxide Thin Films

Chemistry

• Ligand 100%
• Hafnium 66%
• Atomic Layer Epitaxy 66%
• Zirconium 66%
• Metal Oxide 66%
• Capacitor 33%
• Melting Point 33%
• Thermal Stability 33%
• Deposition Process 33%
• Oxide 33%
• Transition Element 33%
• Metal Ion 33%
• Semiconductor 33%
• Evaporation 33%
• Nonconductor 33%
• Oxygen Atom 33%
• Single Crystal X-Ray Diffraction 33%
• Liquid Film 33%
• Metal 33%
• Synthesis (Chemical) 33%
• Group 33%
• Potential 33%
• Thickness 33%
• Intravenous 33%
• Weight Loss 33%

Material Science

• Thermogravimetric Analysis 66%
• Thin Films 33%
• Semiconductor Material 33%
• Durability 33%
• Molecular Structure 33%
• Capacitance 33%
• Liquid Films 33%