Abstract
To date, a number of two-dimensional (2D) topological insulators (TIs) have been realized in Group 14 elemental honeycomb lattices, but all are inversionsymmetric. Here, based on first-principles calculations, we predict a new family of 2D inversion-asymmetric TIs with sizeable bulk gaps from 105 meV to 284 meV, in X2–GeSn (X = H, F, Cl, Br, I) monolayers, making them in principle suitable for room-temperature applications. The nontrivial topological characteristics of inverted band orders are identified in pristine X2–GeSn with X = (F, Cl, Br, I), whereas H2–GeSn undergoes a nontrivial band inversion at 8% lattice expansion. Topologically protected edge states are identified in X2–GeSn with X = (F, Cl, Br, I), as well as in strained H2–GeSn. More importantly, the edges of these systems, which exhibit single-Dirac-cone characteristics located exactly in the middle of their bulk band gaps, are ideal for dissipationless transport. Thus, Group 14 elemental honeycomb lattices provide a fascinating playground for the manipulation of quantum states. [Figure not available: see fulltext.]
Original language | English |
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Pages (from-to) | 3412-3420 |
Number of pages | 9 |
Journal | Nano Research |
Volume | 8 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2015 Oct 1 |
Bibliographical note
Publisher Copyright:© 2015, Tsinghua University Press and Springer-Verlag Berlin Heidelberg.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Electrical and Electronic Engineering