Graphene/h-BN/ZnO van der Waals tunneling heterostructure based ultraviolet photodetector

Zhiqian Wu, Xiaoqiang Li, Huikai Zhong, Shengjiao Zhang, Peng Wang, Tae Ho Kim, Sung Soo Kwak, Cheng Liu, Hongsheng Chen, Sang Woo Kim, Shisheng Lin

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)


We report a novel ultraviolet photodetector based on graphene/hBN/ZnO van der Waals heterostructure. Graphene/ZnO heterostructure shows poor rectification behavior and almost no photoresponse. In comparison, graphene/h-BN/ZnO structure shows improved electrical rectified behavior and surprising high UV photoresponse (1350AW-1), which is two or three orders magnitude larger than reported GaN UV photodetector (0.2∼20AW-1). Such high photoresponse mainly originates from the introduction of ultrathin two-dimensional (2D) insulating h-BN layer, which behaves as the tunneling layer for holes produced in ZnO and the blocking layer for holes in graphene. The graphene/h-BN/ZnO heterostructure should be a novel and representative 2D heterostructure for improving the performance of 2D materials/Semiconductor heterostructure based optoelectronic devices.

Original languageEnglish
Pages (from-to)18864-18871
Number of pages8
JournalOptics Express
Issue number15
Publication statusPublished - 2015 Jul 27

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics


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