Abstract
Two MoS2 field-effect transistors are compared using graphene and Au/Ti source-drain contacts in respects of their Ohmic and OFF behavior on an identical MoS2 nanosheet. As a result, graphene-contact appears not only to show superior ohmic behavior to those of Au/Ti but also more enhanced OFF state behavior. Such results are attributed to the electric-field-induced work function tuning of exfoliated graphene.
Original language | English |
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Pages (from-to) | 2356-2361 |
Number of pages | 6 |
Journal | Small |
Volume | 10 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2014 Jun 25 |
All Science Journal Classification (ASJC) codes
- Biotechnology
- Biomaterials
- Chemistry(all)
- Materials Science(all)