TY - JOUR
T1 - Graphene metallization of high-stress silicon nitride resonators for electrical integration
AU - Lee, Sunwoo
AU - Adiga, Vivekananda P.
AU - Barton, Robert A.
AU - Van Der Zande, Arend M.
AU - Lee, Gwan Hyoung
AU - Ilic, B. Rob
AU - Gondarenko, Alexander
AU - Parpia, Jeevak M.
AU - Craighead, Harold G.
AU - Hone, James
PY - 2013/9/11
Y1 - 2013/9/11
N2 - High stress stoichiometric silicon nitride resonators, whose quality factors exceed one million, have shown promise for applications in sensing, signal processing, and optomechanics. Yet, electrical integration of the insulating silicon nitride resonators has been challenging, as depositing even a thin layer of metal degrades the quality factor significantly. In this work, we show that graphene used as a conductive coating for Si3N4 membranes reduces the quality factor by less than 30% on average, which is minimal when compared to the effect of conventional metallization layers such as chromium or aluminum. The electrical integration of Si3N 4-Graphene (SiNG) heterostructure resonators is demonstrated with electrical readout and electrostatic tuning of the frequency by up to 0.3% per volt. These studies demonstrate the feasibility of hybrid graphene/nitride mechanical resonators in which the electrical properties of graphene are combined with the superior mechanical performance of silicon nitride.
AB - High stress stoichiometric silicon nitride resonators, whose quality factors exceed one million, have shown promise for applications in sensing, signal processing, and optomechanics. Yet, electrical integration of the insulating silicon nitride resonators has been challenging, as depositing even a thin layer of metal degrades the quality factor significantly. In this work, we show that graphene used as a conductive coating for Si3N4 membranes reduces the quality factor by less than 30% on average, which is minimal when compared to the effect of conventional metallization layers such as chromium or aluminum. The electrical integration of Si3N 4-Graphene (SiNG) heterostructure resonators is demonstrated with electrical readout and electrostatic tuning of the frequency by up to 0.3% per volt. These studies demonstrate the feasibility of hybrid graphene/nitride mechanical resonators in which the electrical properties of graphene are combined with the superior mechanical performance of silicon nitride.
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U2 - 10.1021/nl4020414
DO - 10.1021/nl4020414
M3 - Article
C2 - 23905749
AN - SCOPUS:84884263023
SN - 1530-6984
VL - 13
SP - 4275
EP - 4279
JO - Nano letters
JF - Nano letters
IS - 9
ER -