Glucose-based resistive random access memory for transient electronics

Sung Pyo Park, Hee Jun Kim, Jin Hyeok Lee, Hyun Jae Kim

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


In this research, glucose was adopted as the switching layer of resistive random access memory (RRAM) for transient electronics. The fabricated glucose-based RRAM showed bipolar switching behavior with stable endurance (100 cycles) and retention (104 seconds) characteristics, without significant degradation, demonstrating its stable data storage capability and reliability. To investigate the switching mechanism of the glucose-based RRAM, various organic materials were prepared for the switching layer of RRAM. In addition, the dissolution characteristic of the glucose-based RRAM was evaluated to investigate the feasibility of its utilization for transient electronics, using a water-soluble substrate: a sodium carboxymethyl cellulose film. With this approach, a biocompatible glucose-based RRAM was successfully fabricated for future transient electronics.

Original languageEnglish
Pages (from-to)231-237
Number of pages7
JournalJournal of Information Display
Issue number4
Publication statusPublished - 2019 Oct 2

Bibliographical note

Funding Information:
This work was supported by a National Research Foundation of Korea (NRF) grant funded by the South Korea government (MSIT) [grant number 2017R1A2B3008719].

Publisher Copyright:
© 2019, © 2019 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group on behalf of the Korean Information Display Society.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Electrical and Electronic Engineering


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