Generation of planar defects caused by the surface diffusion of Au atoms on SiNWs

Woo Jung Lee, Jin Won Ma, Jung Min Bae, Mann Ho Cho, Jae Pyung Ahn

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4 Citations (Scopus)


The generation of planar defects in silicon nanowires (SiNWs) synthesized by means of a vapor-liquid-solid (VLS) procedure using Au as a catalyst in an ultra-high vacuum chemical vapor deposition (UHV-CVD) system was investigated. Faceting, the formation of planar defects and the diffusion of Au in SiNWs occurred simultaneously, proportional to the growth temperature and the ratio of the H 2 precursor gas. The planes located on the sidewalls of the wire after Au diffusion were faceted (1 1 1) and (1 0 0) surfaces, which represent equilibrium configurations of Si due to surface energy minimization during rapid wire growth under unstable conditions. Moreover, {1 1 1} twin defects were formed on the sidewalls of the faceted boundaries where the Au clusters were mainly located, due to the surface tension of the Au atoms, resulting in clusters at the liquid/solid interfaces in SiNWs with a 〈1 1 1〉 growth direction.

Original languageEnglish
Pages (from-to)2739-2743
Number of pages5
JournalMaterials Research Bulletin
Issue number10
Publication statusPublished - 2012 Oct

Bibliographical note

Funding Information:
This work was partially supported by the New and Renewable Energy R&D program (Grant No.: 2009T100100614 ) under the Ministry of Knowledge Economy.

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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