Gate-oxide integrity in metal-oxide-semiconductor structures with Ti-polycide gates for ULSI applications

D. H. Ko; N. I. Lee; Y. W. Kim; M. Y. Lee

doi:10.1016/S0040-6090(98)00757-3

Gate-oxide integrity in metal-oxide-semiconductor structures with Ti-polycide gates for ULSI applications

D. H. Ko, N. I. Lee, Y. W. Kim, M. Y. Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We have investigated the thermal degradation of gate oxides in metal-oxide-semiconductor (MOS) structures with Ti-polycide gates. We found that the Ti-diffusion into the underlying polysilicon, and consequently to the gate oxide occurs during thermal cycling processes. In the intermediate stages of the Ti-diffusion, Q_bd values of the MOS diodes with Ti-polycide gates decrease, which is due to the increase of the trap densities in gate oxides by the diffusion and subsequent incorporation of Ti in gate oxides. As the diffusion of Ti continues, the initial breakdown of gate oxides at the low-fields occur due to the formation of the gross-defects.

Original language	English
Pages (from-to)	56-59
Number of pages	4
Journal	Thin Solid Films
Volume	326
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(98)00757-3
Publication status	Published - 1998 Aug 4

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(98)00757-3

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title = "Gate-oxide integrity in metal-oxide-semiconductor structures with Ti-polycide gates for ULSI applications",

abstract = "We have investigated the thermal degradation of gate oxides in metal-oxide-semiconductor (MOS) structures with Ti-polycide gates. We found that the Ti-diffusion into the underlying polysilicon, and consequently to the gate oxide occurs during thermal cycling processes. In the intermediate stages of the Ti-diffusion, Qbd values of the MOS diodes with Ti-polycide gates decrease, which is due to the increase of the trap densities in gate oxides by the diffusion and subsequent incorporation of Ti in gate oxides. As the diffusion of Ti continues, the initial breakdown of gate oxides at the low-fields occur due to the formation of the gross-defects.",

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AU - Ko, D. H.

AU - Lee, N. I.

AU - Kim, Y. W.

AU - Lee, M. Y.

PY - 1998/8/4

Y1 - 1998/8/4

N2 - We have investigated the thermal degradation of gate oxides in metal-oxide-semiconductor (MOS) structures with Ti-polycide gates. We found that the Ti-diffusion into the underlying polysilicon, and consequently to the gate oxide occurs during thermal cycling processes. In the intermediate stages of the Ti-diffusion, Qbd values of the MOS diodes with Ti-polycide gates decrease, which is due to the increase of the trap densities in gate oxides by the diffusion and subsequent incorporation of Ti in gate oxides. As the diffusion of Ti continues, the initial breakdown of gate oxides at the low-fields occur due to the formation of the gross-defects.

AB - We have investigated the thermal degradation of gate oxides in metal-oxide-semiconductor (MOS) structures with Ti-polycide gates. We found that the Ti-diffusion into the underlying polysilicon, and consequently to the gate oxide occurs during thermal cycling processes. In the intermediate stages of the Ti-diffusion, Qbd values of the MOS diodes with Ti-polycide gates decrease, which is due to the increase of the trap densities in gate oxides by the diffusion and subsequent incorporation of Ti in gate oxides. As the diffusion of Ti continues, the initial breakdown of gate oxides at the low-fields occur due to the formation of the gross-defects.

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ER -

Gate-oxide integrity in metal-oxide-semiconductor structures with Ti-polycide gates for ULSI applications

Abstract

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