Gate effect on hall voltage in a INSB/FM device

W. Y. Kim, Joonyeon Chang, S. H. Han, W. Y. Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	INTERMAG ASIA 2005
Subtitle of host publication	Digests of the IEEE International Magnetics Conference
Pages	321
Number of pages	1
Publication status	Published - 2005
Event	INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference - Nagoya, Japan Duration: 2005 Apr 4 → 2005 Apr 8

Name	INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference

Other	INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference
Country/Territory	Japan
City	Nagoya
Period	05/4/4 → 05/4/8

All Science Journal Classification (ASJC) codes

@inproceedings{15c6b9e803234b73aaa0ce180157dabf,

title = "Gate effect on hall voltage in a INSB/FM device",

author = "Kim, {W. Y.} and Joonyeon Chang and Han, {S. H.} and Lee, {W. Y.}",

year = "2005",

language = "English",

isbn = "0780390091",

series = "INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference",

pages = "321",

booktitle = "INTERMAG ASIA 2005",

note = "INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference ; Conference date: 04-04-2005 Through 08-04-2005",

}

TY - GEN

T1 - Gate effect on hall voltage in a INSB/FM device

AU - Kim, W. Y.

AU - Chang, Joonyeon

AU - Han, S. H.

AU - Lee, W. Y.

PY - 2005

Y1 - 2005

UR - http://www.scopus.com/inward/record.url?scp=28444479160&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28444479160&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:28444479160

SN - 0780390091

T3 - INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference

SP - 321

BT - INTERMAG ASIA 2005

T2 - INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference

Y2 - 4 April 2005 through 8 April 2005

ER -