Gap-filling of Cu-Al alloy into nanotrenches by cyclic metalorganic chemical vapor deposition

H. K. Moon; S. J. Lee; J. Yoon; H. Kim; N. E. Lee

doi:10.1016/j.materresbull.2012.04.107

Gap-filling of Cu-Al alloy into nanotrenches by cyclic metalorganic chemical vapor deposition

H. K. Moon, S. J. Lee, J. Yoon, H. Kim, N. E. Lee

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this work, Cu-Al alloy thin films with lower values of electrical resistivity than that of an Al-free Cu thin film were produced by cyclic metalorganic chemical vapor deposition (MOCVD), followed by thermal annealing of the Cu/Al multilayer formed, with controlled Cu and Al precursor delivery times. The Ru-coated SiO ₂ trench with the opening width of 50 nm and aspect ratio of 1:6.7 could be completely filled by the Cu-Al alloy. The Ru/SiO ₂ trench, filled conformally and voidlessly by the Cu-Al (0.7 at.%) alloy, showed no presence of intermetallic compounds.

Original language	English
Pages (from-to)	2961-2965
Number of pages	5
Journal	Materials Research Bulletin
Volume	47
Issue number	10
DOIs	https://doi.org/10.1016/j.materresbull.2012.04.107
Publication status	Published - 2012 Oct

Bibliographical note

Funding Information:
This work was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea . This research was also supported by the Korea Institute for the Advancement of Technology (KIAT) through the Human Resource Training Project for Strategic Technology.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.materresbull.2012.04.107

Cite this

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title = "Gap-filling of Cu-Al alloy into nanotrenches by cyclic metalorganic chemical vapor deposition",

abstract = "In this work, Cu-Al alloy thin films with lower values of electrical resistivity than that of an Al-free Cu thin film were produced by cyclic metalorganic chemical vapor deposition (MOCVD), followed by thermal annealing of the Cu/Al multilayer formed, with controlled Cu and Al precursor delivery times. The Ru-coated SiO 2 trench with the opening width of 50 nm and aspect ratio of 1:6.7 could be completely filled by the Cu-Al alloy. The Ru/SiO 2 trench, filled conformally and voidlessly by the Cu-Al (0.7 at.%) alloy, showed no presence of intermetallic compounds.",

author = "Moon, {H. K.} and Lee, {S. J.} and J. Yoon and H. Kim and Lee, {N. E.}",

note = "Funding Information: This work was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea . This research was also supported by the Korea Institute for the Advancement of Technology (KIAT) through the Human Resource Training Project for Strategic Technology. ",

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AU - Moon, H. K.

AU - Lee, S. J.

AU - Yoon, J.

AU - Kim, H.

AU - Lee, N. E.

N1 - Funding Information: This work was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea . This research was also supported by the Korea Institute for the Advancement of Technology (KIAT) through the Human Resource Training Project for Strategic Technology.

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N2 - In this work, Cu-Al alloy thin films with lower values of electrical resistivity than that of an Al-free Cu thin film were produced by cyclic metalorganic chemical vapor deposition (MOCVD), followed by thermal annealing of the Cu/Al multilayer formed, with controlled Cu and Al precursor delivery times. The Ru-coated SiO 2 trench with the opening width of 50 nm and aspect ratio of 1:6.7 could be completely filled by the Cu-Al alloy. The Ru/SiO 2 trench, filled conformally and voidlessly by the Cu-Al (0.7 at.%) alloy, showed no presence of intermetallic compounds.

AB - In this work, Cu-Al alloy thin films with lower values of electrical resistivity than that of an Al-free Cu thin film were produced by cyclic metalorganic chemical vapor deposition (MOCVD), followed by thermal annealing of the Cu/Al multilayer formed, with controlled Cu and Al precursor delivery times. The Ru-coated SiO 2 trench with the opening width of 50 nm and aspect ratio of 1:6.7 could be completely filled by the Cu-Al alloy. The Ru/SiO 2 trench, filled conformally and voidlessly by the Cu-Al (0.7 at.%) alloy, showed no presence of intermetallic compounds.

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Gap-filling of Cu-Al alloy into nanotrenches by cyclic metalorganic chemical vapor deposition

Abstract

Bibliographical note

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