Abstract
The potential of microwave GaN MESFETs is evaluated using a harmonic-balance RF simulator for high-power and high-temperature applications. The simulated device performance (DC I/V characteristics and small-signal power gain) of a GaN FET is in good agreement with experimental data. It is demonstrated that the excellent electrical properties of GaN make it a viable alternative to SiC for microwave high-power and high-temperature applications.
| Original language | English |
|---|---|
| Pages (from-to) | 498-500 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 31 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1995 Mar 16 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering