Gain dynamics and ultrafast spectral hole burning in In(Ga)As self-organized quantum dots

K. Kim; J. Urayama; T. B. Norris; J. Singh; J. Phillips; P. Bhattacharya

doi:10.1063/1.1493665

Gain dynamics and ultrafast spectral hole burning in In(Ga)As self-organized quantum dots

K. Kim, J. Urayama, T. B. Norris, J. Singh, J. Phillips, P. Bhattacharya

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

Using a femtosecond three-pulse pump-probe technique, we investigated spectral hole-burning and gain recovery dynamics in self-organized In(Ga)As quantum dots. The spectral hole dynamics are qualitatively different from those observed in quantum wells, and allow us to distinguish unambiguously the gain recovery due to intradot relaxation and that due to carrier capture. The gain recovery due to carrier-carrier scattering-dominated intradot relaxation is very fast (∼130fs), indicating that this is not the factor limiting the bandwidth of directly modulated quantum dot lasers.

Original language	English
Pages (from-to)	670-672
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	4
DOIs	https://doi.org/10.1063/1.1493665
Publication status	Published - 2002 Jul 22

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1493665

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abstract = "Using a femtosecond three-pulse pump-probe technique, we investigated spectral hole-burning and gain recovery dynamics in self-organized In(Ga)As quantum dots. The spectral hole dynamics are qualitatively different from those observed in quantum wells, and allow us to distinguish unambiguously the gain recovery due to intradot relaxation and that due to carrier capture. The gain recovery due to carrier-carrier scattering-dominated intradot relaxation is very fast (∼130fs), indicating that this is not the factor limiting the bandwidth of directly modulated quantum dot lasers.",

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AU - Singh, J.

AU - Phillips, J.

AU - Bhattacharya, P.

PY - 2002/7/22

Y1 - 2002/7/22

N2 - Using a femtosecond three-pulse pump-probe technique, we investigated spectral hole-burning and gain recovery dynamics in self-organized In(Ga)As quantum dots. The spectral hole dynamics are qualitatively different from those observed in quantum wells, and allow us to distinguish unambiguously the gain recovery due to intradot relaxation and that due to carrier capture. The gain recovery due to carrier-carrier scattering-dominated intradot relaxation is very fast (∼130fs), indicating that this is not the factor limiting the bandwidth of directly modulated quantum dot lasers.

AB - Using a femtosecond three-pulse pump-probe technique, we investigated spectral hole-burning and gain recovery dynamics in self-organized In(Ga)As quantum dots. The spectral hole dynamics are qualitatively different from those observed in quantum wells, and allow us to distinguish unambiguously the gain recovery due to intradot relaxation and that due to carrier capture. The gain recovery due to carrier-carrier scattering-dominated intradot relaxation is very fast (∼130fs), indicating that this is not the factor limiting the bandwidth of directly modulated quantum dot lasers.

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Gain dynamics and ultrafast spectral hole burning in In(Ga)As self-organized quantum dots

Abstract

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