Abstract
Femtosecond three-pulse white light pump and probe differential transmission (DT) spectroscopy were used to analyze gain dynamics and spectral hole-burning in In(Ga)As self-organized quantum dots (QD). Molecular beam epitaxy was used to grow the samples on a (001) semi-insulating GaAs substrate. Analysis suggested that QD excited state carriers were reservoirs for optically active ground state carriers with sub-picosecond gain recovery.
| Original language | English |
|---|---|
| Pages (from-to) | 401-402 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 2 |
| Publication status | Published - 2001 |
| Event | 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society - San Diego, CA, United States Duration: 2001 Nov 11 → 2001 Nov 15 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering