Fully strained Si0.75Ge0.25 epitaxial films with HfSiO gate dielectrics for high mobility channel metal-oxide semiconductor devices

Jungwoo Oh; Prashant Majhi; Raj Jammy; Raymond Joe; Takuya Sugawara; Yasushi Akasaka; Takanobu Kaitsuka; Tsunetoshi Arikado; Masayuki Tomoyasu

doi:10.1016/j.mee.2008.05.013

Fully strained Si_0.75Ge_0.25 epitaxial films with HfSiO gate dielectrics for high mobility channel metal-oxide semiconductor devices

Jungwoo Oh, Prashant Majhi, Raj Jammy, Raymond Joe, Takuya Sugawara, Yasushi Akasaka, Takanobu Kaitsuka, Tsunetoshi Arikado, Masayuki Tomoyasu

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

Abstract

The authors report on fully strained Si_0.75Ge_0.25 metal-oxide-semiconductor capacitors with HfSiO₂ high-k gate dielectric and TaN metal gate fabricated on Si substrates. Fully strained Si_0.75Ge_0.25 films are directly grown on Si substrates below the critical thickness. HfSiO₂ high-k gate dielectrics exhibit an equivalent oxide thickness of 13-18 Å with a permittivity of 17.7 and gate leakage current density lower than SiO₂ gate oxides by >100×. Interfacial oxide of the HfSiO₂/Si_0.75Ge_0.25 stack consists primarily of SiO₂ with a small amount of Ge and Hf. High performance SiGe field effect transistors are highly manufacturable with excellent electrical characteristics afforded by the fully strained HfSiO₂/SiGe gate stack.

Original language	English
Pages (from-to)	1804-1806
Number of pages	3
Journal	Microelectronic Engineering
Volume	85
Issue number	8
DOIs	https://doi.org/10.1016/j.mee.2008.05.013
Publication status	Published - 2008 Aug

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2008.05.013

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@article{b99bec43503e4df287aa0c7b093d6249,

title = "Fully strained Si0.75Ge0.25 epitaxial films with HfSiO gate dielectrics for high mobility channel metal-oxide semiconductor devices",

abstract = "The authors report on fully strained Si0.75Ge0.25 metal-oxide-semiconductor capacitors with HfSiO2 high-k gate dielectric and TaN metal gate fabricated on Si substrates. Fully strained Si0.75Ge0.25 films are directly grown on Si substrates below the critical thickness. HfSiO2 high-k gate dielectrics exhibit an equivalent oxide thickness of 13-18 {\AA} with a permittivity of 17.7 and gate leakage current density lower than SiO2 gate oxides by >100×. Interfacial oxide of the HfSiO2/Si0.75Ge0.25 stack consists primarily of SiO2 with a small amount of Ge and Hf. High performance SiGe field effect transistors are highly manufacturable with excellent electrical characteristics afforded by the fully strained HfSiO2/SiGe gate stack.",

author = "Jungwoo Oh and Prashant Majhi and Raj Jammy and Raymond Joe and Takuya Sugawara and Yasushi Akasaka and Takanobu Kaitsuka and Tsunetoshi Arikado and Masayuki Tomoyasu",

year = "2008",

month = aug,

doi = "10.1016/j.mee.2008.05.013",

language = "English",

volume = "85",

pages = "1804--1806",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "8",

}

TY - JOUR

T1 - Fully strained Si0.75Ge0.25 epitaxial films with HfSiO gate dielectrics for high mobility channel metal-oxide semiconductor devices

AU - Oh, Jungwoo

AU - Majhi, Prashant

AU - Jammy, Raj

AU - Joe, Raymond

AU - Sugawara, Takuya

AU - Akasaka, Yasushi

AU - Kaitsuka, Takanobu

AU - Arikado, Tsunetoshi

AU - Tomoyasu, Masayuki

PY - 2008/8

Y1 - 2008/8

N2 - The authors report on fully strained Si0.75Ge0.25 metal-oxide-semiconductor capacitors with HfSiO2 high-k gate dielectric and TaN metal gate fabricated on Si substrates. Fully strained Si0.75Ge0.25 films are directly grown on Si substrates below the critical thickness. HfSiO2 high-k gate dielectrics exhibit an equivalent oxide thickness of 13-18 Å with a permittivity of 17.7 and gate leakage current density lower than SiO2 gate oxides by >100×. Interfacial oxide of the HfSiO2/Si0.75Ge0.25 stack consists primarily of SiO2 with a small amount of Ge and Hf. High performance SiGe field effect transistors are highly manufacturable with excellent electrical characteristics afforded by the fully strained HfSiO2/SiGe gate stack.

AB - The authors report on fully strained Si0.75Ge0.25 metal-oxide-semiconductor capacitors with HfSiO2 high-k gate dielectric and TaN metal gate fabricated on Si substrates. Fully strained Si0.75Ge0.25 films are directly grown on Si substrates below the critical thickness. HfSiO2 high-k gate dielectrics exhibit an equivalent oxide thickness of 13-18 Å with a permittivity of 17.7 and gate leakage current density lower than SiO2 gate oxides by >100×. Interfacial oxide of the HfSiO2/Si0.75Ge0.25 stack consists primarily of SiO2 with a small amount of Ge and Hf. High performance SiGe field effect transistors are highly manufacturable with excellent electrical characteristics afforded by the fully strained HfSiO2/SiGe gate stack.

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U2 - 10.1016/j.mee.2008.05.013

DO - 10.1016/j.mee.2008.05.013

M3 - Article

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SN - 0167-9317

VL - 85

SP - 1804

EP - 1806

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 8

ER -

Fully strained Si_0.75Ge_0.25 epitaxial films with HfSiO gate dielectrics for high mobility channel metal-oxide semiconductor devices

Abstract

All Science Journal Classification (ASJC) codes

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