Fully strained low-temperature epitaxy of TiN/MgO(001) layers using high-flux, low-energy ion irradiation during reactive magnetron sputter deposition

Taeyoon Lee; H. Seo; H. Hwang; B. Howe; S. Kodambaka; J. E. Greene; I. Petrov

doi:10.1016/j.tsf.2010.04.028

Fully strained low-temperature epitaxy of TiN/MgO(001) layers using high-flux, low-energy ion irradiation during reactive magnetron sputter deposition

Taeyoon Lee, H. Seo, H. Hwang, B. Howe, S. Kodambaka, J. E. Greene, I. Petrov

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Letter › peer-review

15 Citations (Scopus)

Abstract

Epitaxial TiN layers, 0.3 μm thick, are grown on MgO(001) in the absence of applied substrate heating using very high flux, low-energy (below the lattice atom displacement threshold), ion irradiation during reactive magnetron sputter deposition in pure N₂ discharges. High-resolution x-ray diffraction, reciprocal lattice maps, and transmission electron microscopy analyses reveal that the TiN(001) films grow with an (001)_TiN||(001) _MgO and [100]_TiN||[100]_MgO orientation relationship to the substrate. The layers are fully coherent with no detectable misfit dislocations. For comparison, TiN/MgO(001) films grown at temperatures of 700-850 °C under similar conditions, but with no intentional ion irradiation, are fully relaxed with a high misfit dislocation density. Thus, the present results reveal that intense low-energy ion irradiation during film growth facilitates high adatom mobilities giving rise to low-temperature epitaxy, while the low growth temperature quenches strain-induced relaxation and suppresses misfit dislocation formation.

Original language	English
Pages (from-to)	5169-5172
Number of pages	4
Journal	Thin Solid Films
Volume	518
Issue number	18
DOIs	https://doi.org/10.1016/j.tsf.2010.04.028
Publication status	Published - 2010 Jul 1

Bibliographical note

Funding Information:
This research was supported by the U.S. Department of Energy, Division of Materials Science , grant DEFG02-91ER45439 through the University of Illinois Frederick Seitz Materials Research Laboratory (FS-MRL) and by Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2009-0093823). We appreciate the use of the facilities at the FS-MRL Center for Microanalysis of Materials, which is partially supported by DOE, at the University of Illinois.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2010.04.028

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title = "Fully strained low-temperature epitaxy of TiN/MgO(001) layers using high-flux, low-energy ion irradiation during reactive magnetron sputter deposition",

abstract = "Epitaxial TiN layers, 0.3 μm thick, are grown on MgO(001) in the absence of applied substrate heating using very high flux, low-energy (below the lattice atom displacement threshold), ion irradiation during reactive magnetron sputter deposition in pure N2 discharges. High-resolution x-ray diffraction, reciprocal lattice maps, and transmission electron microscopy analyses reveal that the TiN(001) films grow with an (001)TiN||(001) MgO and [100]TiN||[100]MgO orientation relationship to the substrate. The layers are fully coherent with no detectable misfit dislocations. For comparison, TiN/MgO(001) films grown at temperatures of 700-850 °C under similar conditions, but with no intentional ion irradiation, are fully relaxed with a high misfit dislocation density. Thus, the present results reveal that intense low-energy ion irradiation during film growth facilitates high adatom mobilities giving rise to low-temperature epitaxy, while the low growth temperature quenches strain-induced relaxation and suppresses misfit dislocation formation.",

author = "Taeyoon Lee and H. Seo and H. Hwang and B. Howe and S. Kodambaka and Greene, {J. E.} and I. Petrov",

note = "Funding Information: This research was supported by the U.S. Department of Energy, Division of Materials Science , grant DEFG02-91ER45439 through the University of Illinois Frederick Seitz Materials Research Laboratory (FS-MRL) and by Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2009-0093823). We appreciate the use of the facilities at the FS-MRL Center for Microanalysis of Materials, which is partially supported by DOE, at the University of Illinois.",

year = "2010",

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doi = "10.1016/j.tsf.2010.04.028",

language = "English",

volume = "518",

pages = "5169--5172",

journal = "Thin Solid Films",

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T1 - Fully strained low-temperature epitaxy of TiN/MgO(001) layers using high-flux, low-energy ion irradiation during reactive magnetron sputter deposition

AU - Lee, Taeyoon

AU - Seo, H.

AU - Hwang, H.

AU - Howe, B.

AU - Kodambaka, S.

AU - Greene, J. E.

AU - Petrov, I.

N1 - Funding Information: This research was supported by the U.S. Department of Energy, Division of Materials Science , grant DEFG02-91ER45439 through the University of Illinois Frederick Seitz Materials Research Laboratory (FS-MRL) and by Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2009-0093823). We appreciate the use of the facilities at the FS-MRL Center for Microanalysis of Materials, which is partially supported by DOE, at the University of Illinois.

PY - 2010/7/1

Y1 - 2010/7/1

N2 - Epitaxial TiN layers, 0.3 μm thick, are grown on MgO(001) in the absence of applied substrate heating using very high flux, low-energy (below the lattice atom displacement threshold), ion irradiation during reactive magnetron sputter deposition in pure N2 discharges. High-resolution x-ray diffraction, reciprocal lattice maps, and transmission electron microscopy analyses reveal that the TiN(001) films grow with an (001)TiN||(001) MgO and [100]TiN||[100]MgO orientation relationship to the substrate. The layers are fully coherent with no detectable misfit dislocations. For comparison, TiN/MgO(001) films grown at temperatures of 700-850 °C under similar conditions, but with no intentional ion irradiation, are fully relaxed with a high misfit dislocation density. Thus, the present results reveal that intense low-energy ion irradiation during film growth facilitates high adatom mobilities giving rise to low-temperature epitaxy, while the low growth temperature quenches strain-induced relaxation and suppresses misfit dislocation formation.

AB - Epitaxial TiN layers, 0.3 μm thick, are grown on MgO(001) in the absence of applied substrate heating using very high flux, low-energy (below the lattice atom displacement threshold), ion irradiation during reactive magnetron sputter deposition in pure N2 discharges. High-resolution x-ray diffraction, reciprocal lattice maps, and transmission electron microscopy analyses reveal that the TiN(001) films grow with an (001)TiN||(001) MgO and [100]TiN||[100]MgO orientation relationship to the substrate. The layers are fully coherent with no detectable misfit dislocations. For comparison, TiN/MgO(001) films grown at temperatures of 700-850 °C under similar conditions, but with no intentional ion irradiation, are fully relaxed with a high misfit dislocation density. Thus, the present results reveal that intense low-energy ion irradiation during film growth facilitates high adatom mobilities giving rise to low-temperature epitaxy, while the low growth temperature quenches strain-induced relaxation and suppresses misfit dislocation formation.

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Fully strained low-temperature epitaxy of TiN/MgO(001) layers using high-flux, low-energy ion irradiation during reactive magnetron sputter deposition

Abstract

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