Fully Solution-Processed and Foldable Metal-Oxide Thin-Film Transistor

Su Jeong Lee, Jieun Ko, Ki Ho Nam, Taehee Kim, Sang Hoon Lee, Jung Han Kim, Gee Sung Chae, Hs Han, Youn Sang Kim, Jae Min Myoung

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


Flexible and foldable thin-film transistors (TFTs) have been widely studied with the objective of achieving high-performance and low-cost flexible TFTs for next-generation displays. In this study, we introduced the fabrication of foldable TFT devices with excellent mechanical stability, high transparency, and high performance by a fully solution process including PI, YOx, In2O3, SWCNTs, IL-PVP, and Ag NWs. The fabricated fully solution-processed TFTs showed a higher transmittance above 86% in the visible range. Additionally, the charge-carrier mobility and Ion/Ioff ratio of them were 7.12 ± 0.43 cm2/V·s and 5.53 ± 0.82 × 105 at a 3 V low voltage operating, respectively. In particular, the fully solution-processed TFTs showed good electrical characteristics under tensile strain with 1 mm bending and even extreme folding up to a strain of 26.79%. Due to the good compatibility of each component layer, it maintained the charge-carrier mobility over 79% of initial devices after 5,000 cycles of folding test in both the parallel and perpendicular direction with a bending radius of 1 mm. These results show the potential of the fully solution-processed TFTs as flexible TFTs for a next generation devices because of the robust mechanical flexibility, transparency, and high electrical performance of it.

Original languageEnglish
Pages (from-to)12894-12900
Number of pages7
JournalACS Applied Materials and Interfaces
Issue number20
Publication statusPublished - 2016 May 25

Bibliographical note

Publisher Copyright:
© 2016 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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