Full-band quantum transport simulations of monolayer MoS2 transistors: Possibility of negative differential resistance

Jiwon Chang; Leonard F. Register; Sanjay K. Banerjee

doi:10.1109/DRC.2013.6633800

Full-band quantum transport simulations of monolayer MoS₂ transistors: Possibility of negative differential resistance

Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee

School of System & Semiconductor Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	71st Device Research Conference, DRC 2013 - Conference Digest
Pages	75-76
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2013.6633800
Publication status	Published - 2013
Event	71st Device Research Conference, DRC 2013 - Notre Dame, IN, United States Duration: 2013 Jun 23 → 2013 Jun 26

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Conference

Conference	71st Device Research Conference, DRC 2013
Country/Territory	United States
City	Notre Dame, IN
Period	13/6/23 → 13/6/26

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2013.6633800

Cite this

@inproceedings{0287b80bcabc49cabea1648089d419b5,

title = "Full-band quantum transport simulations of monolayer MoS2 transistors: Possibility of negative differential resistance",

author = "Jiwon Chang and Register, {Leonard F.} and Banerjee, {Sanjay K.}",

year = "2013",

doi = "10.1109/DRC.2013.6633800",

language = "English",

isbn = "9781479908110",

series = "Device Research Conference - Conference Digest, DRC",

pages = "75--76",

booktitle = "71st Device Research Conference, DRC 2013 - Conference Digest",

note = "71st Device Research Conference, DRC 2013 ; Conference date: 23-06-2013 Through 26-06-2013",

}

Chang, J, Register, LF & Banerjee, SK 2013, Full-band quantum transport simulations of monolayer MoS₂ transistors: Possibility of negative differential resistance. in 71st Device Research Conference, DRC 2013 - Conference Digest., 6633800, Device Research Conference - Conference Digest, DRC, pp. 75-76, 71st Device Research Conference, DRC 2013, Notre Dame, IN, United States, 13/6/23. https://doi.org/10.1109/DRC.2013.6633800

Full-band quantum transport simulations of monolayer MoS₂ transistors: Possibility of negative differential resistance. / Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.
71st Device Research Conference, DRC 2013 - Conference Digest. 2013. p. 75-76 6633800 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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