Free exciton transitions and Varshni's coefficients for GaN epitaxial layers grown by horizontal LP-MOCVD

Annamraju Kasi Viswanath; Joo In Lee; C. R. Lee; J. Y. Leem; Dongho Kim

doi:10.1016/s0038-1098(98)00378-0

Free exciton transitions and Varshni's coefficients for GaN epitaxial layers grown by horizontal LP-MOCVD

Annamraju Kasi Viswanath, Joo In Lee, C. R. Lee, J. Y. Leem, Dongho Kim

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have studied the photoluminescence properties of undoped epitaxial layers of GaN on sapphire substrate grown by horizontal low pressure metal organic chemical vapor deposition (LP-MOCVD) method in the temperature range of 9-300 K. At 9 K the spectra are dominated by the well resolved interband free excitons A and B as well as bound excitons. Temperature dependence of free exciton transitions was studied and Varshni's coefficients for the temperature variation of bandgap were determined.

Original language	English
Pages (from-to)	483-487
Number of pages	5
Journal	Solid State Communications
Volume	108
Issue number	7
DOIs	https://doi.org/10.1016/s0038-1098(98)00378-0
Publication status	Published - 1998 Oct 16

Bibliographical note

Funding Information:
This research is supported by Creative Research Initiatives of the Ministry of Science and Technology of Korea. One of the authors (AKV) thanks the brain pool program of Korea for financial support.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/s0038-1098(98)00378-0

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title = "Free exciton transitions and Varshni's coefficients for GaN epitaxial layers grown by horizontal LP-MOCVD",

abstract = "We have studied the photoluminescence properties of undoped epitaxial layers of GaN on sapphire substrate grown by horizontal low pressure metal organic chemical vapor deposition (LP-MOCVD) method in the temperature range of 9-300 K. At 9 K the spectra are dominated by the well resolved interband free excitons A and B as well as bound excitons. Temperature dependence of free exciton transitions was studied and Varshni's coefficients for the temperature variation of bandgap were determined.",

author = "Viswanath, {Annamraju Kasi} and Lee, {Joo In} and Lee, {C. R.} and Leem, {J. Y.} and Dongho Kim",

note = "Funding Information: This research is supported by Creative Research Initiatives of the Ministry of Science and Technology of Korea. One of the authors (AKV) thanks the brain pool program of Korea for financial support.",

year = "1998",

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doi = "10.1016/s0038-1098(98)00378-0",

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T1 - Free exciton transitions and Varshni's coefficients for GaN epitaxial layers grown by horizontal LP-MOCVD

AU - Viswanath, Annamraju Kasi

AU - Lee, Joo In

AU - Lee, C. R.

AU - Leem, J. Y.

AU - Kim, Dongho

N1 - Funding Information: This research is supported by Creative Research Initiatives of the Ministry of Science and Technology of Korea. One of the authors (AKV) thanks the brain pool program of Korea for financial support.

PY - 1998/10/16

Y1 - 1998/10/16

N2 - We have studied the photoluminescence properties of undoped epitaxial layers of GaN on sapphire substrate grown by horizontal low pressure metal organic chemical vapor deposition (LP-MOCVD) method in the temperature range of 9-300 K. At 9 K the spectra are dominated by the well resolved interband free excitons A and B as well as bound excitons. Temperature dependence of free exciton transitions was studied and Varshni's coefficients for the temperature variation of bandgap were determined.

AB - We have studied the photoluminescence properties of undoped epitaxial layers of GaN on sapphire substrate grown by horizontal low pressure metal organic chemical vapor deposition (LP-MOCVD) method in the temperature range of 9-300 K. At 9 K the spectra are dominated by the well resolved interband free excitons A and B as well as bound excitons. Temperature dependence of free exciton transitions was studied and Varshni's coefficients for the temperature variation of bandgap were determined.

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JO - Solid State Communications

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Free exciton transitions and Varshni's coefficients for GaN epitaxial layers grown by horizontal LP-MOCVD

Abstract

Bibliographical note

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