We have studied the photoluminescence properties of undoped epitaxial layers of GaN on sapphire substrate grown by horizontal low pressure metal organic chemical vapor deposition (LP-MOCVD) method in the temperature range of 9-300 K. At 9 K the spectra are dominated by the well resolved interband free excitons A and B as well as bound excitons. Temperature dependence of free exciton transitions was studied and Varshni's coefficients for the temperature variation of bandgap were determined.
|Number of pages||5|
|Journal||Solid State Communications|
|Publication status||Published - 1998 Oct 16|
Bibliographical noteFunding Information:
This research is supported by Creative Research Initiatives of the Ministry of Science and Technology of Korea. One of the authors (AKV) thanks the brain pool program of Korea for financial support.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry