TY - GEN
T1 - Formation of suicide nanowires by annealing of atomic layer deposition cobalt/silicon core-shell nanowires
AU - Lee, Han Bo Ram
AU - Heo, Kwang
AU - Hong, Seunghun
AU - Kim, Hyungjun
PY - 2009
Y1 - 2009
N2 - Co/Si core-shell nanowires (NWs) were fabricated by using highly conformai thermal atomic layer deposition (TH-ALD) of Co and the formation of Co suicide NWs by annealing was investigated. When Co/Si core-shell NWs were annealed without capping layer, no Co suicide was observed due to oxygen contamination. To prevent oxygen contamination, in situ TH-ALD Ru was used for capping layer utilizing its excellent conformality suitable for 3-D nanostructures as well as thermal stability. The scanning transmission electron spectroscopy analysis showed Si NWs are perfectly wrapped by TH-ALD Ru/Co films, resulting in the formation of Ru/Co/Si core-shell NWs. By annealing Ru/Co/Si core-shell NWs, CoSi2 was formed above Ta = 800 ° C. This silicidation by using TH-ALD Co and Ru can be effectively used for the fabrication of future nanoscale devices.
AB - Co/Si core-shell nanowires (NWs) were fabricated by using highly conformai thermal atomic layer deposition (TH-ALD) of Co and the formation of Co suicide NWs by annealing was investigated. When Co/Si core-shell NWs were annealed without capping layer, no Co suicide was observed due to oxygen contamination. To prevent oxygen contamination, in situ TH-ALD Ru was used for capping layer utilizing its excellent conformality suitable for 3-D nanostructures as well as thermal stability. The scanning transmission electron spectroscopy analysis showed Si NWs are perfectly wrapped by TH-ALD Ru/Co films, resulting in the formation of Ru/Co/Si core-shell NWs. By annealing Ru/Co/Si core-shell NWs, CoSi2 was formed above Ta = 800 ° C. This silicidation by using TH-ALD Co and Ru can be effectively used for the fabrication of future nanoscale devices.
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M3 - Conference contribution
AN - SCOPUS:74249100150
SN - 9781566777414
T3 - ECS Transactions
SP - 157
EP - 161
BT - ECS Transactions - Atomic Layer Deposition Applications 5
PB - Electrochemical Society Inc.
T2 - 5th Symposium on Atomic Layer Deposition - 216th Meeting of the Electrochemical Society
Y2 - 5 October 2009 through 7 October 2009
ER -
