Formation of shallow junctions using Ge-Si heterostructures for high mobility channel MOSFETs

Jungwoo Oh; Prashant Majhi; Hi Deok Lee; Kyong Taek Lee; Won Ho Choi; Ji Woon Yang; Yong Kang Chang; Rusty Harris; S. C. Song; Pankaj Kalra; Sehoon Lee; Sanjay Banerjee; Hun Lee Byoung; Hsing Huang Tseng; Raj Jammy

doi:10.1109/IWJT.2007.4279946

Formation of shallow junctions using Ge-Si heterostructures for high mobility channel MOSFETs

Jungwoo Oh, Prashant Majhi, Hi Deok Lee, Kyong Taek Lee, Won Ho Choi, Ji Woon Yang, Yong Kang Chang, Rusty Harris, S. C. Song, Pankaj Kalra, Sehoon Lee, Sanjay Banerjee, Hun Lee Byoung, Hsing Huang Tseng, Raj Jammy

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

Shallow junctions formed on thin Ge-on-Si heterostructures are characterized in this paper. The reverse leakage current showed a strong dependence on the Ge thickness, which is believed to be due to the different activation temperature of ions implanted in the Ge layers and in the Si substrates. Ge pMOSFETs fabricated on thin Ge layers showed more significant improvement in short channel effects (SCEs) and subthreshold swing (SS) characteristics than those on thick Ge layers. Ge pMOSFETs on thin Ge are a very promising device structure for future technology nodes because of their superior immunity to short channel effects and potential drivability due to their high mobility channel.

Original language	English
Title of host publication	Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007
Pages	55-60
Number of pages	6
DOIs	https://doi.org/10.1109/IWJT.2007.4279946
Publication status	Published - 2007
Event	7th International Workshop on Junction Technologies, IWJT 2007 - Kyoto, Japan Duration: 2007 Jun 8 → 2007 Jun 9

Publication series

Name	Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007

Other

Other	7th International Workshop on Junction Technologies, IWJT 2007
Country/Territory	Japan
City	Kyoto
Period	07/6/8 → 07/6/9

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/IWJT.2007.4279946

Cite this

Oh, J., Majhi, P., Lee, H. D., Lee, K. T., Choi, W. H., Yang, J. W., Chang, Y. K., Harris, R., Song, S. C., Kalra, P., Lee, S., Banerjee, S., Byoung, H. L., Tseng, H. H., & Jammy, R. (2007). Formation of shallow junctions using Ge-Si heterostructures for high mobility channel MOSFETs. In Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007 (pp. 55-60). Article 4279946 (Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007). https://doi.org/10.1109/IWJT.2007.4279946

@inproceedings{9e719bf0f64b49c68c63378f765ca51c,

title = "Formation of shallow junctions using Ge-Si heterostructures for high mobility channel MOSFETs",

abstract = "Shallow junctions formed on thin Ge-on-Si heterostructures are characterized in this paper. The reverse leakage current showed a strong dependence on the Ge thickness, which is believed to be due to the different activation temperature of ions implanted in the Ge layers and in the Si substrates. Ge pMOSFETs fabricated on thin Ge layers showed more significant improvement in short channel effects (SCEs) and subthreshold swing (SS) characteristics than those on thick Ge layers. Ge pMOSFETs on thin Ge are a very promising device structure for future technology nodes because of their superior immunity to short channel effects and potential drivability due to their high mobility channel.",

author = "Jungwoo Oh and Prashant Majhi and Lee, {Hi Deok} and Lee, {Kyong Taek} and Choi, {Won Ho} and Yang, {Ji Woon} and Chang, {Yong Kang} and Rusty Harris and Song, {S. C.} and Pankaj Kalra and Sehoon Lee and Sanjay Banerjee and Byoung, {Hun Lee} and Tseng, {Hsing Huang} and Raj Jammy",

year = "2007",

doi = "10.1109/IWJT.2007.4279946",

language = "English",

isbn = "1424411033",

series = "Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007",

pages = "55--60",

booktitle = "Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007",

note = "7th International Workshop on Junction Technologies, IWJT 2007 ; Conference date: 08-06-2007 Through 09-06-2007",

}

Oh, J, Majhi, P, Lee, HD, Lee, KT, Choi, WH, Yang, JW, Chang, YK, Harris, R, Song, SC, Kalra, P, Lee, S, Banerjee, S, Byoung, HL, Tseng, HH & Jammy, R 2007, Formation of shallow junctions using Ge-Si heterostructures for high mobility channel MOSFETs. in Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007., 4279946, Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007, pp. 55-60, 7th International Workshop on Junction Technologies, IWJT 2007, Kyoto, Japan, 07/6/8. https://doi.org/10.1109/IWJT.2007.4279946

Formation of shallow junctions using Ge-Si heterostructures for high mobility channel MOSFETs. / Oh, Jungwoo; Majhi, Prashant; Lee, Hi Deok et al.
Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007. 2007. p. 55-60 4279946 (Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Formation of shallow junctions using Ge-Si heterostructures for high mobility channel MOSFETs

AU - Oh, Jungwoo

AU - Majhi, Prashant

AU - Lee, Hi Deok

AU - Lee, Kyong Taek

AU - Choi, Won Ho

AU - Yang, Ji Woon

AU - Chang, Yong Kang

AU - Harris, Rusty

AU - Song, S. C.

AU - Kalra, Pankaj

AU - Lee, Sehoon

AU - Banerjee, Sanjay

AU - Byoung, Hun Lee

AU - Tseng, Hsing Huang

AU - Jammy, Raj

PY - 2007

Y1 - 2007

N2 - Shallow junctions formed on thin Ge-on-Si heterostructures are characterized in this paper. The reverse leakage current showed a strong dependence on the Ge thickness, which is believed to be due to the different activation temperature of ions implanted in the Ge layers and in the Si substrates. Ge pMOSFETs fabricated on thin Ge layers showed more significant improvement in short channel effects (SCEs) and subthreshold swing (SS) characteristics than those on thick Ge layers. Ge pMOSFETs on thin Ge are a very promising device structure for future technology nodes because of their superior immunity to short channel effects and potential drivability due to their high mobility channel.

AB - Shallow junctions formed on thin Ge-on-Si heterostructures are characterized in this paper. The reverse leakage current showed a strong dependence on the Ge thickness, which is believed to be due to the different activation temperature of ions implanted in the Ge layers and in the Si substrates. Ge pMOSFETs fabricated on thin Ge layers showed more significant improvement in short channel effects (SCEs) and subthreshold swing (SS) characteristics than those on thick Ge layers. Ge pMOSFETs on thin Ge are a very promising device structure for future technology nodes because of their superior immunity to short channel effects and potential drivability due to their high mobility channel.

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DO - 10.1109/IWJT.2007.4279946

M3 - Conference contribution

AN - SCOPUS:47649108113

SN - 1424411033

SN - 9781424411030

T3 - Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007

SP - 55

EP - 60

BT - Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007

T2 - 7th International Workshop on Junction Technologies, IWJT 2007

Y2 - 8 June 2007 through 9 June 2007

ER -

Oh J, Majhi P, Lee HD, Lee KT, Choi WH, Yang JW et al. Formation of shallow junctions using Ge-Si heterostructures for high mobility channel MOSFETs. In Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007. 2007. p. 55-60. 4279946. (Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007). doi: 10.1109/IWJT.2007.4279946

Formation of shallow junctions using Ge-Si heterostructures for high mobility channel MOSFETs

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