Formation of p-type ZnO film on InP substrate by phosphor doping

Kyu Hyun Bang, Deuk Kyu Hwang, Min Chul Park, Young Don Ko, Ilgu Yun, Jae Min Myoung

Research output: Contribution to journalArticlepeer-review

95 Citations (Scopus)


ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn 3 P 2 was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn 3 P 2 diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices.

Original languageEnglish
Pages (from-to)177-182
Number of pages6
JournalApplied Surface Science
Issue number3-4
Publication statusPublished - 2003 Apr 15

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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