Formation of p-type ZnO film on InP substrate by phosphor doping

Kyu Hyun Bang; Deuk Kyu Hwang; Min Chul Park; Young Don Ko; Ilgu Yun; Jae Min Myoung

doi:10.1016/S0169-4332(03)00151-X

Formation of p-type ZnO film on InP substrate by phosphor doping

Kyu Hyun Bang, Deuk Kyu Hwang, Min Chul Park, Young Don Ko, Ilgu Yun, Jae Min Myoung

Research output: Contribution to journal › Article › peer-review

95 Citations (Scopus)

Abstract

ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn ₃ P ₂ was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn ₃ P ₂ diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices.

Original language	English
Pages (from-to)	177-182
Number of pages	6
Journal	Applied Surface Science
Volume	210
Issue number	3-4
DOIs	https://doi.org/10.1016/S0169-4332(03)00151-X
Publication status	Published - 2003 Apr 15

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(03)00151-X

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title = "Formation of p-type ZnO film on InP substrate by phosphor doping",

abstract = " ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn 3 P 2 was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn 3 P 2 diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices.",

author = "Bang, {Kyu Hyun} and Hwang, {Deuk Kyu} and Park, {Min Chul} and Ko, {Young Don} and Ilgu Yun and Myoung, {Jae Min}",

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T1 - Formation of p-type ZnO film on InP substrate by phosphor doping

AU - Bang, Kyu Hyun

AU - Hwang, Deuk Kyu

AU - Park, Min Chul

AU - Ko, Young Don

AU - Yun, Ilgu

AU - Myoung, Jae Min

PY - 2003/4/15

Y1 - 2003/4/15

N2 - ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn 3 P 2 was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn 3 P 2 diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices.

AB - ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn 3 P 2 was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn 3 P 2 diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices.

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Formation of p-type ZnO film on InP substrate by phosphor doping

Abstract

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