Formation of graphene on SiC by chemical vapor deposition with liquid sources

Jun Gyu Kim; Woo Sik Kim; Young Hee Kim; Chang Hyun Lim; Doo Jin Choi

doi:10.1016/j.surfcoat.2012.06.066

Formation of graphene on SiC by chemical vapor deposition with liquid sources

Jun Gyu Kim, Woo Sik Kim, Young Hee Kim, Chang Hyun Lim, Doo Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Many studies of graphene and graphene oxide (GO) have been conducted due to their excellent chemical, mechanical and electrical properties and wide potential applications, and various methods are used to fabricate them. In this study, we grew graphene on silicon carbide (SiC) substrates by chemical vapor deposition (CVD) using toluene- and xylene-based liquid sources. Raman spectroscopy and TEM analysis confirmed the growth of graphene on SiC substrates when toluene was used and revealed that GO grew when xylene was used. The mechanism of the formation of GO and graphene from the different liquid sources was examined, and the change in thickness and electrical conductivity observed when graphene and GO were reduced through heat treatment was also evaluated.

Original language	English
Pages (from-to)	189-192
Number of pages	4
Journal	Surface and Coatings Technology
Volume	231
DOIs	https://doi.org/10.1016/j.surfcoat.2012.06.066
Publication status	Published - 2013 Sept 25

Bibliographical note

Funding Information:
This research was conducted with support from the International Collaborative Research and Development Program of the Korea Institute for the Advancement of Technology .

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.surfcoat.2012.06.066

Cite this

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title = "Formation of graphene on SiC by chemical vapor deposition with liquid sources",

abstract = "Many studies of graphene and graphene oxide (GO) have been conducted due to their excellent chemical, mechanical and electrical properties and wide potential applications, and various methods are used to fabricate them. In this study, we grew graphene on silicon carbide (SiC) substrates by chemical vapor deposition (CVD) using toluene- and xylene-based liquid sources. Raman spectroscopy and TEM analysis confirmed the growth of graphene on SiC substrates when toluene was used and revealed that GO grew when xylene was used. The mechanism of the formation of GO and graphene from the different liquid sources was examined, and the change in thickness and electrical conductivity observed when graphene and GO were reduced through heat treatment was also evaluated.",

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AU - Kim, Jun Gyu

AU - Kim, Woo Sik

AU - Kim, Young Hee

AU - Lim, Chang Hyun

AU - Choi, Doo Jin

N1 - Funding Information: This research was conducted with support from the International Collaborative Research and Development Program of the Korea Institute for the Advancement of Technology .

PY - 2013/9/25

Y1 - 2013/9/25

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AB - Many studies of graphene and graphene oxide (GO) have been conducted due to their excellent chemical, mechanical and electrical properties and wide potential applications, and various methods are used to fabricate them. In this study, we grew graphene on silicon carbide (SiC) substrates by chemical vapor deposition (CVD) using toluene- and xylene-based liquid sources. Raman spectroscopy and TEM analysis confirmed the growth of graphene on SiC substrates when toluene was used and revealed that GO grew when xylene was used. The mechanism of the formation of GO and graphene from the different liquid sources was examined, and the change in thickness and electrical conductivity observed when graphene and GO were reduced through heat treatment was also evaluated.

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JO - Surface and Coatings Technology

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Formation of graphene on SiC by chemical vapor deposition with liquid sources

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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