Formation and epitaxial growth of titanium-disilicide on Si (111)

Chi Kyu Choi, Hyung Ho Park, Jeong Yong Lee, Kyoung Ik Cho, Mun Cheol Paek, Oh Joon Kwon, Kun Ho Kim, Soo Jeong Yang

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Titanium-disilicide was formed by deposition of high purity titanium (99.99%) on a silicon (111) wafer in ultra-high vacuum and in-situ annealing. The deposition was monitered using reflection high energy electron diffraction as a function of deposited titanium thickness. The epitaxial growth of TiSi2 on Si (111) by deposition of 200 monolayer thick titanium on the clean surface of silicon and annealing at 750°C for 1 h was identified using a transmission electron microscope. Almost the whole area of the silicide layer was revealed as epitaxial TiSi2 with C54 structure. Cross-sectional high resolution images of the sample showed that the TiSi2/Si interface is incoherent. Three kinds of orientation relationships were identified as (111)TiSi2|(220)Si, [123]TiSi2|[112]Si, (311)TiSi2|(002)Si, [136] TiSi2|[110]Si and (022)TiSi2|(200)Si, [233]TiSi2|[011]Si with misorientations of 6°, 2° and 14.74°, respectively.

Original languageEnglish
Pages (from-to)579-588
Number of pages10
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 1991 Dec 2

Bibliographical note

Funding Information:
This work was supported in part by the Center for interface Science and Engineering. KAIST. This work has been financed by the Foundation

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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