Formation and characterizations of ultra-shallow p+-n junctions using B10H14 ion implantation

G. Y. Jeon, J. S. Kim, C. N. Whang, S. Im, J. H. Song, J. H. Song, W. K. Choi, H. K. Kim

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


We report on the ultra-shallow p+-n junction formation by decaborane (B10H14) ion implantation into n-Si(1 0 0) substrates. The implantation energies of 5, 10 and 15 keV were used with the doses of 1 × 1012 and 1 × 1013 cm-2. The implanted samples were then subject to activation-annealing at 800, 900 and 1000 °C for 10 s. According to the results of secondary ion mass spectrometry, the p+ layer thinner than 50 nm formed in most of the samples. Current-voltage (I-V) measurements performed on the p+-n junction exhibited that the minimum leakage current density at -5 V was ∼ 10-6 A/cm2 when the decaborane of 1 × 1013 cm-2 was implanted, while the maximum activated carrier dose of p+ layers was measured up to 8.1 × 1013 cm-2 by Hall measurements.

Original languageEnglish
Pages (from-to)409-412
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Publication statusPublished - 2003 May
Event13th International conference on Ion beam modification of Mate - Kobe, Japan
Duration: 2002 Sept 12002 Sept 6

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation


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