Fluorine as a shallow acceptor in ZnSe

E. D. Sim; Y. S. Joh; S. I. Min; C. D. Lee; S. K. Chang

doi:10.1016/S0022-0248(96)01124-4

Fluorine as a shallow acceptor in ZnSe

E. D. Sim, Y. S. Joh, S. I. Min, C. D. Lee, S. K. Chang

Department of Physics

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Abstract

Fluorine-doped ZnSe epilayers were grown by metalorganic atomic layer epitaxy using a selective doping method and were characterized by photoluminescence spectroscopy. The photoluminescence spectrum of the fluorine-doped ZnSe epilayer exhibits two emission peaks when fluorine is supplied onto the Zn surface. The origin of these emission peaks is suggested to be due to the excitons bound to neutral fluorine atoms and the donor-to-fluorine acceptor emission. This is confirmed through the change in the energy positions of the emission peaks with the excitation intensity. These results suggest that fluorine is incorporated as an acceptor with an energy level of about 90 meV.

Original language	English
Pages (from-to)	185-190
Number of pages	6
Journal	Journal of Crystal Growth
Volume	177
Issue number	3-4
DOIs	https://doi.org/10.1016/S0022-0248(96)01124-4
Publication status	Published - 1997 Jun

Bibliographical note

Funding Information:
The authorsa reg ratefutlo Dr. H. Chenga t EPI for his suggestioinn thec hoiceo f the dopants ource CF 4 for dopingo f fluorinein to ZnSe,a ndfor critical discussionsT.h is work was supporteidn part by the NondirectedR esearchF und, Korea Research Foundation,1 995, Project No. 01D0621a nd in part by the Basic Science Research Institute Program, the Ministry of Educationo f Korea, 1995,P rojectN o. 2424.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(96)01124-4

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@article{1362c19942154114bb0bdcfc0d4b1de7,

title = "Fluorine as a shallow acceptor in ZnSe",

abstract = "Fluorine-doped ZnSe epilayers were grown by metalorganic atomic layer epitaxy using a selective doping method and were characterized by photoluminescence spectroscopy. The photoluminescence spectrum of the fluorine-doped ZnSe epilayer exhibits two emission peaks when fluorine is supplied onto the Zn surface. The origin of these emission peaks is suggested to be due to the excitons bound to neutral fluorine atoms and the donor-to-fluorine acceptor emission. This is confirmed through the change in the energy positions of the emission peaks with the excitation intensity. These results suggest that fluorine is incorporated as an acceptor with an energy level of about 90 meV.",

author = "Sim, {E. D.} and Joh, {Y. S.} and Min, {S. I.} and Lee, {C. D.} and Chang, {S. K.}",

note = "Funding Information: The authorsa reg ratefutlo Dr. H. Chenga t EPI for his suggestioinn thec hoiceo f the dopants ource CF 4 for dopingo f fluorinein to ZnSe,a ndfor critical discussionsT.h is work was supporteidn part by the NondirectedR esearchF und, Korea Research Foundation,1 995, Project No. 01D0621a nd in part by the Basic Science Research Institute Program, the Ministry of Educationo f Korea, 1995,P rojectN o. 2424.",

year = "1997",

month = jun,

doi = "10.1016/S0022-0248(96)01124-4",

language = "English",

volume = "177",

pages = "185--190",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "3-4",

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TY - JOUR

T1 - Fluorine as a shallow acceptor in ZnSe

AU - Sim, E. D.

AU - Joh, Y. S.

AU - Min, S. I.

AU - Lee, C. D.

AU - Chang, S. K.

N1 - Funding Information: The authorsa reg ratefutlo Dr. H. Chenga t EPI for his suggestioinn thec hoiceo f the dopants ource CF 4 for dopingo f fluorinein to ZnSe,a ndfor critical discussionsT.h is work was supporteidn part by the NondirectedR esearchF und, Korea Research Foundation,1 995, Project No. 01D0621a nd in part by the Basic Science Research Institute Program, the Ministry of Educationo f Korea, 1995,P rojectN o. 2424.

PY - 1997/6

Y1 - 1997/6

N2 - Fluorine-doped ZnSe epilayers were grown by metalorganic atomic layer epitaxy using a selective doping method and were characterized by photoluminescence spectroscopy. The photoluminescence spectrum of the fluorine-doped ZnSe epilayer exhibits two emission peaks when fluorine is supplied onto the Zn surface. The origin of these emission peaks is suggested to be due to the excitons bound to neutral fluorine atoms and the donor-to-fluorine acceptor emission. This is confirmed through the change in the energy positions of the emission peaks with the excitation intensity. These results suggest that fluorine is incorporated as an acceptor with an energy level of about 90 meV.

AB - Fluorine-doped ZnSe epilayers were grown by metalorganic atomic layer epitaxy using a selective doping method and were characterized by photoluminescence spectroscopy. The photoluminescence spectrum of the fluorine-doped ZnSe epilayer exhibits two emission peaks when fluorine is supplied onto the Zn surface. The origin of these emission peaks is suggested to be due to the excitons bound to neutral fluorine atoms and the donor-to-fluorine acceptor emission. This is confirmed through the change in the energy positions of the emission peaks with the excitation intensity. These results suggest that fluorine is incorporated as an acceptor with an energy level of about 90 meV.

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UR - http://www.scopus.com/inward/citedby.url?scp=0031166994&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(96)01124-4

DO - 10.1016/S0022-0248(96)01124-4

M3 - Article

AN - SCOPUS:0031166994

SN - 0022-0248

VL - 177

SP - 185

EP - 190

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -

Fluorine as a shallow acceptor in ZnSe

Abstract

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