Fluorine as a shallow acceptor in ZnSe

E. D. Sim, Y. S. Joh, S. I. Min, C. D. Lee, S. K. Chang

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1 Citation (Scopus)


Fluorine-doped ZnSe epilayers were grown by metalorganic atomic layer epitaxy using a selective doping method and were characterized by photoluminescence spectroscopy. The photoluminescence spectrum of the fluorine-doped ZnSe epilayer exhibits two emission peaks when fluorine is supplied onto the Zn surface. The origin of these emission peaks is suggested to be due to the excitons bound to neutral fluorine atoms and the donor-to-fluorine acceptor emission. This is confirmed through the change in the energy positions of the emission peaks with the excitation intensity. These results suggest that fluorine is incorporated as an acceptor with an energy level of about 90 meV.

Original languageEnglish
Pages (from-to)185-190
Number of pages6
JournalJournal of Crystal Growth
Issue number3-4
Publication statusPublished - 1997 Jun

Bibliographical note

Funding Information:
The authorsa reg ratefutlo Dr. H. Chenga t EPI for his suggestioinn thec hoiceo f the dopants ource CF 4 for dopingo f fluorinein to ZnSe,a ndfor critical discussionsT.h is work was supporteidn part by the NondirectedR esearchF und, Korea Research Foundation,1 995, Project No. 01D0621a nd in part by the Basic Science Research Institute Program, the Ministry of Educationo f Korea, 1995,P rojectN o. 2424.

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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