Fluorinated Graphene Contacts and Passivation Layer for MoS2 Field Effect Transistors

Huije Ryu, Dong Hyun Kim, Junyoung Kwon, Sang Kyu Park, Wanggon Lee, Hyungtak Seo, Kenji Watanabe, Takashi Taniguchi, Sun Phil Kim, Arend M. van der Zande, Jangyup Son, Gwan Hyoung Lee

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Realizing a future of 2D semiconductor-based devices requires new approaches to channel passivation and nondestructive contact engineering. Here, a facile one-step technique is shown that simultaneously utilizes monolayer fluorinated graphene (FG) as the passivation layer and contact buffer layer to 2D semiconductor transistors. Monolayer graphene is transferred onto the MoS2, followed by fluorination by XeF2 gas exposure. Metal electrodes for source and drain are fabricated on top of FG-covered MoS2 regions. The MoS2 transistor is perfectly passivated by insulating FG layer and, in the contacts, FG layer also acts as an efficient charge injection layer, leading to the formation of Ohmic contacts and high carrier mobility of up to 64 cm2 V−1 s−1 at room temperature. This work shows a novel strategy for simultaneous fabrication of passivation layer and low-resistance contacts by using ultrathin functionalized graphene, which has applications for high performance 2D semiconductor integrated electronics.

Original languageEnglish
Article number2101370
JournalAdvanced Electronic Materials
Volume8
Issue number10
DOIs
Publication statusPublished - 2022 Oct

Bibliographical note

Publisher Copyright:
© 2022 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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