TY - GEN
T1 - Flexible thin flim transistor using printed single-walled carbon nanotubes
AU - Jang, Suk Jae
AU - Ahn, Jong Hyun
PY - 2010
Y1 - 2010
N2 - Flexible thin film transistors (TFT) were fabricated with randomly oriented single-walled carbon nanotubes (SWNTs) synthesized selectively on a designed array of catalyst photoresists using the plasma-enhanced chemical vapor deposition (PECVD) method. The process involves SWNTs growth on SiO 2/Si substrates, followed by transfer-printing of tubes onto thin, flexible sheets of plastic. Electrical measurements on the resulting devices reveal good characteristics. These results might be of interest for various applications of SWNTs in flexible electronics.
AB - Flexible thin film transistors (TFT) were fabricated with randomly oriented single-walled carbon nanotubes (SWNTs) synthesized selectively on a designed array of catalyst photoresists using the plasma-enhanced chemical vapor deposition (PECVD) method. The process involves SWNTs growth on SiO 2/Si substrates, followed by transfer-printing of tubes onto thin, flexible sheets of plastic. Electrical measurements on the resulting devices reveal good characteristics. These results might be of interest for various applications of SWNTs in flexible electronics.
UR - http://www.scopus.com/inward/record.url?scp=77951662433&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77951662433&partnerID=8YFLogxK
U2 - 10.1109/INEC.2010.5424575
DO - 10.1109/INEC.2010.5424575
M3 - Conference contribution
AN - SCOPUS:77951662433
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 720
EP - 721
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010
Y2 - 3 January 2010 through 8 January 2010
ER -