Flexible non-volatile ferroelectric polymer memory with gate-controlled multilevel operation

Sun Kak Hwang; Insung Bae; Richard Hahnkee Kim; Cheolmin Park

doi:10.1002/adma.201201831

Flexible non-volatile ferroelectric polymer memory with gate-controlled multilevel operation

Sun Kak Hwang, Insung Bae, Richard Hahnkee Kim, Cheolmin Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

173 Citations (Scopus)

Abstract

A flexible field-effect transistor with a poly(3-hexylthiophene) (P3HT) active channel and a ferroelectric poly(vinlyidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) insulator exhibits gate-voltage-controllable multilevel non-volatile memory characteristics with highly reliable data retention and endurance.

Original language	English
Pages (from-to)	5910-5914
Number of pages	5
Journal	Advanced Materials
Volume	24
Issue number	44
DOIs	https://doi.org/10.1002/adma.201201831
Publication status	Published - 2012 Nov 20

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201201831

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title = "Flexible non-volatile ferroelectric polymer memory with gate-controlled multilevel operation",

abstract = "A flexible field-effect transistor with a poly(3-hexylthiophene) (P3HT) active channel and a ferroelectric poly(vinlyidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) insulator exhibits gate-voltage-controllable multilevel non-volatile memory characteristics with highly reliable data retention and endurance.",

author = "Hwang, {Sun Kak} and Insung Bae and Kim, {Richard Hahnkee} and Cheolmin Park",

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AU - Bae, Insung

AU - Kim, Richard Hahnkee

AU - Park, Cheolmin

PY - 2012/11/20

Y1 - 2012/11/20

N2 - A flexible field-effect transistor with a poly(3-hexylthiophene) (P3HT) active channel and a ferroelectric poly(vinlyidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) insulator exhibits gate-voltage-controllable multilevel non-volatile memory characteristics with highly reliable data retention and endurance.

AB - A flexible field-effect transistor with a poly(3-hexylthiophene) (P3HT) active channel and a ferroelectric poly(vinlyidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) insulator exhibits gate-voltage-controllable multilevel non-volatile memory characteristics with highly reliable data retention and endurance.

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JO - Advanced Materials

JF - Advanced Materials

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ER -

Flexible non-volatile ferroelectric polymer memory with gate-controlled multilevel operation

Abstract

All Science Journal Classification (ASJC) codes

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