We report on the fabrication of complementary inverters that have ZnO and pentacene as n -type and p -type channels on a polyethersulfone substrate operating under 7 V. Patterned Al and Al Ox thin film were deposited at room temperature on the plastic as a common gate electrode and dielectric, respectively. After initial gate instability between ZnO channel and Al Ox dielectric was controlled, our n -type thin-film transistors (TFTs) displayed quite a similar drain current level to that of p -type TFTs. Our flexible complementary device showed much high voltage gain of ∼100 even under a bent condition (56 mm radius of curvature). Our complementary inverter also demonstrates a promising dynamic behavior of ∼20 ms.
|Journal||Applied Physics Letters|
|Publication status||Published - 2008|
Bibliographical noteFunding Information:
This work was supported by IT R&D program of MKE (2006-S079-02, Smart window with transparent electronic devices), the financial support from the Fundamental R&D Program for Core Technology of Materials funded by the MKE, Republic of Korea. M.S.O. was supported by the Seoul Science Fellowship, the National Graduate Science and Technology Scholarship, and Brain Korea 21 program.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)