Flexible high gain complementary inverter using n-ZnO and p -pentacene channels on polyethersulfone substrate

Min Suk Oh; Wonjun Choi; Kimoon Lee; D. K. Hwang; Seongil Im

doi:10.1063/1.2956406

Flexible high gain complementary inverter using n-ZnO and p -pentacene channels on polyethersulfone substrate

Min Suk Oh, Wonjun Choi, Kimoon Lee, D. K. Hwang, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

We report on the fabrication of complementary inverters that have ZnO and pentacene as n -type and p -type channels on a polyethersulfone substrate operating under 7 V. Patterned Al and Al Ox thin film were deposited at room temperature on the plastic as a common gate electrode and dielectric, respectively. After initial gate instability between ZnO channel and Al Ox dielectric was controlled, our n -type thin-film transistors (TFTs) displayed quite a similar drain current level to that of p -type TFTs. Our flexible complementary device showed much high voltage gain of ∼100 even under a bent condition (56 mm radius of curvature). Our complementary inverter also demonstrates a promising dynamic behavior of ∼20 ms.

Original language	English
Article number	033510
Journal	Applied Physics Letters
Volume	93
Issue number	3
DOIs	https://doi.org/10.1063/1.2956406
Publication status	Published - 2008

Bibliographical note

Funding Information:
This work was supported by IT R&D program of MKE (2006-S079-02, Smart window with transparent electronic devices), the financial support from the Fundamental R&D Program for Core Technology of Materials funded by the MKE, Republic of Korea. M.S.O. was supported by the Seoul Science Fellowship, the National Graduate Science and Technology Scholarship, and Brain Korea 21 program.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2956406

Cite this

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title = "Flexible high gain complementary inverter using n-ZnO and p -pentacene channels on polyethersulfone substrate",

abstract = "We report on the fabrication of complementary inverters that have ZnO and pentacene as n -type and p -type channels on a polyethersulfone substrate operating under 7 V. Patterned Al and Al Ox thin film were deposited at room temperature on the plastic as a common gate electrode and dielectric, respectively. After initial gate instability between ZnO channel and Al Ox dielectric was controlled, our n -type thin-film transistors (TFTs) displayed quite a similar drain current level to that of p -type TFTs. Our flexible complementary device showed much high voltage gain of ∼100 even under a bent condition (56 mm radius of curvature). Our complementary inverter also demonstrates a promising dynamic behavior of ∼20 ms.",

author = "Oh, {Min Suk} and Wonjun Choi and Kimoon Lee and Hwang, {D. K.} and Seongil Im",

note = "Funding Information: This work was supported by IT R&D program of MKE (2006-S079-02, Smart window with transparent electronic devices), the financial support from the Fundamental R&D Program for Core Technology of Materials funded by the MKE, Republic of Korea. M.S.O. was supported by the Seoul Science Fellowship, the National Graduate Science and Technology Scholarship, and Brain Korea 21 program.",

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doi = "10.1063/1.2956406",

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volume = "93",

journal = "Applied Physics Letters",

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T1 - Flexible high gain complementary inverter using n-ZnO and p -pentacene channels on polyethersulfone substrate

AU - Oh, Min Suk

AU - Choi, Wonjun

AU - Lee, Kimoon

AU - Hwang, D. K.

AU - Im, Seongil

N1 - Funding Information: This work was supported by IT R&D program of MKE (2006-S079-02, Smart window with transparent electronic devices), the financial support from the Fundamental R&D Program for Core Technology of Materials funded by the MKE, Republic of Korea. M.S.O. was supported by the Seoul Science Fellowship, the National Graduate Science and Technology Scholarship, and Brain Korea 21 program.

PY - 2008

Y1 - 2008

N2 - We report on the fabrication of complementary inverters that have ZnO and pentacene as n -type and p -type channels on a polyethersulfone substrate operating under 7 V. Patterned Al and Al Ox thin film were deposited at room temperature on the plastic as a common gate electrode and dielectric, respectively. After initial gate instability between ZnO channel and Al Ox dielectric was controlled, our n -type thin-film transistors (TFTs) displayed quite a similar drain current level to that of p -type TFTs. Our flexible complementary device showed much high voltage gain of ∼100 even under a bent condition (56 mm radius of curvature). Our complementary inverter also demonstrates a promising dynamic behavior of ∼20 ms.

AB - We report on the fabrication of complementary inverters that have ZnO and pentacene as n -type and p -type channels on a polyethersulfone substrate operating under 7 V. Patterned Al and Al Ox thin film were deposited at room temperature on the plastic as a common gate electrode and dielectric, respectively. After initial gate instability between ZnO channel and Al Ox dielectric was controlled, our n -type thin-film transistors (TFTs) displayed quite a similar drain current level to that of p -type TFTs. Our flexible complementary device showed much high voltage gain of ∼100 even under a bent condition (56 mm radius of curvature). Our complementary inverter also demonstrates a promising dynamic behavior of ∼20 ms.

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Flexible high gain complementary inverter using n-ZnO and p -pentacene channels on polyethersulfone substrate

Abstract

Bibliographical note

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